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用于高效稳定钙钛矿太阳能电池的埋入界面分子桥

Molecular Bridge on Buried Interface for Efficient and Stable Perovskite Solar Cells.

作者信息

Guo Haodan, Xiang Wanchun, Fang Yanyan, Li Jingrui, Lin Yuan

机构信息

Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, China.

CAS Key Laboratory of Photochemistry, CAS Research/Education Center for Excellence in Molecular Sciences, Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China.

出版信息

Angew Chem Int Ed Engl. 2023 Aug 21;62(34):e202304568. doi: 10.1002/anie.202304568. Epub 2023 Jul 13.

DOI:10.1002/anie.202304568
PMID:37363891
Abstract

The interface of perovskite solar cells (PSCs) is significantly important for charge transfer and device stability, while the buried interface with the impact on perovskite film growth has been paid less attention. Herein, we use a molecular modifier, glycocyamine (GDA) to build a molecular bridge on the buried interface of SnO /perovskite, resulting in superior interfacial contact. This is achieved through the strongly interaction between GDA and SnO , which also appreciably modulates the energy level. Moreover, GDA can regulate the perovskite crystal growth, yielding perovskite film with enlarged grain size and absence of pinholes, exhibiting substantially reduced defect density. Consequently, PSCs with GDA modification demonstrate significant improvement of open circuit voltage (close to 1.2 V) and fill factor, leading to an improved power conversion efficiency from 22.60 % to 24.70 %. Additionally, stabilities of GDA devices under maximum power point and 85 °C heat both perform better than the control devices.

摘要

钙钛矿太阳能电池(PSC)的界面对于电荷转移和器件稳定性至关重要,而对钙钛矿薄膜生长有影响的埋入界面却较少受到关注。在此,我们使用分子改性剂胍基乙胺(GDA)在SnO/钙钛矿的埋入界面上构建分子桥,从而实现优异的界面接触。这是通过GDA与SnO之间的强相互作用实现的,这种相互作用还能显著调节能级。此外,GDA可以调节钙钛矿晶体生长,得到晶粒尺寸增大且无针孔的钙钛矿薄膜,缺陷密度大幅降低。因此,经GDA改性的PSC表现出开路电压(接近1.2 V)和填充因子的显著提高,功率转换效率从22.60%提高到24.70%。此外,GDA器件在最大功率点和85°C加热条件下的稳定性均优于对照器件。

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