Phimu L Kholee, Dhar Rudra Sankar, Singh Khomdram Jolson, Banerjee Amit
Department of Electronics and Communication Engineering, National Institute of Technology Mizoram, Aizawl 796012, India.
Department of Electronics and Communication Engineering, Manipur Institute of Technology, Canchipur, Imphal 795003, India.
Micromachines (Basel). 2023 Jun 10;14(6):1226. doi: 10.3390/mi14061226.
Comparative studies of the 2D numerical modelling and simulation of graphene-based gallium arsenide and silicon Schottky junction solar cell are studied using TCAD tools. The performance of photovoltaic cells was examined while taking parameters, such as substrate thickness, relationship between transmittance and work function of graphene, and n-type doing concentration of substrate semiconduction. The area with the highest efficiency for photogenerated carriers was found to be located near the interface region under light illumination. The significant enhancement of power conversion efficiency was shown in the cell with a thicker carrier absorption Si substrate layer, larger graphene work function, and average doping in a silicon substrate. Thus, for improved cell structure, the maximum = 4.7 mA/cm, = 0.19 V, and fill factor = 59.73% are found under AM1.5G, exhibiting maximum efficiency of 6.5% (1 sun). The EQE of the cell is well above 60%. This work reports the influence of different substrate thickness, work function, and N-type doping on the efficiency and characteristics of graphene-based Schottky solar cells.
利用TCAD工具对基于石墨烯的砷化镓和硅肖特基结太阳能电池的二维数值建模与模拟进行了比较研究。在考虑诸如衬底厚度、石墨烯的透射率与功函数之间的关系以及衬底半导体的n型掺杂浓度等参数的情况下,对光伏电池的性能进行了研究。发现在光照下,光生载流子效率最高的区域位于界面区域附近。在具有较厚载流子吸收硅衬底层、较大石墨烯功函数以及硅衬底平均掺杂的电池中,功率转换效率有显著提高。因此,为了改进电池结构,在AM1.5G条件下,最大电流密度(J = 4.7 mA/cm^2),开路电压(V_{oc}= 0.19 V),填充因子(FF = 59.73%),最大效率为(6.5%)(1个太阳)。该电池的外量子效率(EQE)远高于60%。这项工作报道了不同衬底厚度、功函数和N型掺杂对基于石墨烯的肖特基太阳能电池效率和特性的影响。