Liu Xiaoyan, Han Lin, Ruan Xiaoke, Chu Tao
Opt Lett. 2023 Jul 1;48(13):3487-3490. doi: 10.1364/OL.494537.
We demonstrated a SiN-SiN-Si three-layer silicon waveguide crossing with low-loss crossings and interlayer couplers. The underpass and overpass crossings exhibited ultralow loss (<0.82/1.16 mdB) and cross talk (<-56/-48 dB) in the wavelength range of 1260-1340 nm. To reduce the loss and length of the interlayer coupler, a parabolic interlayer coupling structure was adopted. The measured interlayer coupling loss was less than 0.11 dB from 1260 to 1340 nm, which is, to the best of our knowledge, the lowest loss reported for an interlayer coupler based on a SiN-SiN-Si three-layer platform. The total interlayer coupler length was only 120 µm.
我们展示了一种具有低损耗交叉和层间耦合器的SiN-SiN-Si三层硅波导交叉结构。下穿和上穿交叉结构在1260 - 1340纳米波长范围内表现出超低损耗(<0.82/1.16毫分贝)和串扰(<-56/-48分贝)。为了降低层间耦合器的损耗和长度,采用了抛物线形层间耦合结构。在1260至1340纳米范围内测得的层间耦合损耗小于0.11分贝,据我们所知,这是基于SiN-SiN-Si三层平台的层间耦合器所报道的最低损耗。层间耦合器的总长度仅为120微米。