Howe R T
Ann Biomed Eng. 1986;14(2):187-97. doi: 10.1007/BF02584269.
Polycrystalline silicon (poly-Si) micromechanical structures can be made by selectively etching an underlying sacrificial oxide layer. Advantages of this micromachining technique are its simplicity and compatibility with conventional integrated-circuit processing. Compressive internal stress in poly-Si films constrains the dimensions of microstructures; fortunately, it can be reduced through annealing. Fabrication of an integrated vapor sensor incorporating a resonant poly-Si microbridge and on-chip NMOS circuitry is described. Frequency response measurements imply that poly-Si films have a Young's modulus of 4 X 10(10) Nm-2, substantially lower than crystalline silicon. A potential application of poly-Si micromachining is fabrication of an integrated pressure transducer; evaluation of this device identifies areas for further research.
多晶硅（poly-Si）微机械结构可通过选择性蚀刻下面的牺牲氧化层来制造。这种微加工技术的优点是其简单性以及与传统集成电路工艺的兼容性。多晶硅薄膜中的压缩内应力会限制微结构的尺寸；幸运的是，可通过退火来降低该应力。本文描述了一种集成蒸汽传感器的制造，该传感器包含一个谐振多晶硅微桥和片上NMOS电路。频率响应测量表明，多晶硅薄膜的杨氏模量为4×10¹⁰ N/m²，远低于晶体硅。多晶硅微加工的一个潜在应用是制造集成压力传感器；对该器件的评估确定了进一步研究的领域。
