• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

High-Temperature-Operable Electromechanical Computing Units Enabled by Aligned Carbon Nanotube Arrays.

作者信息

Jo Eunhwan, Kang Yunsung, Sim Sangjun, Lee Hojoon, Kim Jongbaeg

机构信息

School of Mechanical Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea.

出版信息

ACS Nano. 2023 Jul 25;17(14):13310-13318. doi: 10.1021/acsnano.3c01304. Epub 2023 Jul 7.

DOI:10.1021/acsnano.3c01304
PMID:37418328
Abstract

Nano/micro-electromechanical (NEM/MEM) contact switches have great potential as energy-efficient and high-temperature-operable computing units to surmount those limitations of transistors. However, despite recent advances, the high-temperature operation of the mechanical switch is not fully stable nor repetitive due to the melting and softening of the contact material in the mechanical switch. Herein, MEM switches with carbon nanotube (CNT) arrays capable of operating at high temperatures are presented. In addition to the excellent thermal stability of CNT arrays, the absence of a melting point of CNTs allows the proposed switches to operate successfully at up to 550 °C, surpassing the maximum operating temperatures of state-of-the-art mechanical switches. The switches with CNTs also show a highly reliable contact lifetime of over 1 million cycles, even at a high temperature of 550 °C. Moreover, symmetrical pairs of normally open and normally closed MEM switches, whose interfaces are initially in contact and separated, respectively, are introduced. Consequently, the complementary inverters and logic gates operating at high temperatures can be easily configured such as NOT, NOR, and NAND gates. These switches and logic gates reveal the possibility for developing low-power, high-performance integrated circuits for high-temperature operations.

摘要

相似文献

1
High-Temperature-Operable Electromechanical Computing Units Enabled by Aligned Carbon Nanotube Arrays.
ACS Nano. 2023 Jul 25;17(14):13310-13318. doi: 10.1021/acsnano.3c01304. Epub 2023 Jul 7.
2
Integration of a Carbon Nanotube Network on a Microelectromechanical Switch for Ultralong Contact Lifetime.用于超长接触寿命的微机电开关上碳纳米管网络的集成
ACS Appl Mater Interfaces. 2019 May 22;11(20):18617-18625. doi: 10.1021/acsami.9b02747. Epub 2019 May 8.
3
Integration of Gold Nanoparticle-Carbon Nanotube Composite for Enhanced Contact Lifetime of Microelectromechanical Switches with Very Low Contact Resistance.用于增强微机电开关接触寿命且具有极低接触电阻的金纳米颗粒-碳纳米管复合材料集成
ACS Appl Mater Interfaces. 2021 Apr 14;13(14):16959-16967. doi: 10.1021/acsami.0c22084. Epub 2021 Apr 2.
4
Scalable complementary logic gates with chemically doped semiconducting carbon nanotube transistors.具有化学掺杂半导体碳纳米管晶体管的可扩展互补逻辑门。
ACS Nano. 2011 Mar 22;5(3):2369-75. doi: 10.1021/nn200270e. Epub 2011 Mar 3.
5
A 0.2 V Micro-Electromechanical Switch Enabled by a Phase Transition.一种由相变驱动的0.2V微机电开关。
Small. 2018 Apr;14(14):e1703621. doi: 10.1002/smll.201703621. Epub 2018 Feb 26.
6
>1000-Fold Lifetime Extension of a Nickel Electromechanical Contact Device via Graphene.通过石墨烯实现镍机电接触装置的 1000 倍寿命延长
ACS Appl Mater Interfaces. 2018 Mar 14;10(10):9085-9093. doi: 10.1021/acsami.7b15772. Epub 2018 Mar 5.
7
Complementary logic gate arrays based on carbon nanotube network transistors.基于碳纳米管网络晶体管的互补逻辑门阵列。
Small. 2013 Mar 25;9(6):813-9. doi: 10.1002/smll.201201237. Epub 2012 Dec 3.
8
Electromechanical computing at 500 degrees C with silicon carbide.在 500°C 下使用碳化硅进行机电计算。
Science. 2010 Sep 10;329(5997):1316-8. doi: 10.1126/science.1192511.
9
Complementary Transistors Based on Aligned Semiconducting Carbon Nanotube Arrays.基于对齐半导体碳纳米管阵列的互补晶体管
ACS Nano. 2022 Dec 27;16(12):21482-21490. doi: 10.1021/acsnano.2c10007. Epub 2022 Nov 23.
10
Carbon nanotube complementary wrap-gate transistors.碳纳米管互补式环绕栅晶体管。
Nano Lett. 2013 Jun 12;13(6):2490-5. doi: 10.1021/nl400544q. Epub 2013 May 2.

引用本文的文献

1
Integrating Hard Silicon for High-Performance Soft Electronics via Geometry Engineering.通过几何工程集成用于高性能柔性电子器件的硬质硅。
Nanomicro Lett. 2025 Apr 14;17(1):218. doi: 10.1007/s40820-025-01724-1.