Liang Renhong, Zhu Liwen, Liu Hua, Ye Mao, Shu Longlong, Zheng Renkui, Ke Shanming
School of Physics and Materials Science, Nanchang University, Nanchang 330031, PR China.
School of Physics and Materials Science, Guangzhou University, Guangzhou 510006, PR China.
ACS Appl Mater Interfaces. 2023 Jul 26;15(29):35170-35177. doi: 10.1021/acsami.3c05402. Epub 2023 Jul 12.
The advantages of van der Waals epitaxy have attracted great interest because they can meet the requirements that conventional epitaxy struggles to satisfy. The weak adatom-substrate interaction without directional covalent bonding drastically relaxes the lattice matching limitation. However, the weak adatom-substrate interaction also leads to ineffectiveness in directing the crystal growth structure, limiting it to one orientation in epitaxial growth. In this work, we propose a domain matching strategy to guide the perovskite-type crystal epitaxial growth on 2D substrates, and we have demonstrated selective deposition of highly (001)-, (110)-, and (111)-oriented epitaxial FeN thin films on mica substrates using applicable transition structure design. Our work makes it possible to achieve and control different orientations of van der Waals epitaxy on the same substrate.
范德华外延的优势引起了极大的关注，因为它们能够满足传统外延难以满足的要求。不存在方向性共价键的弱吸附原子 - 衬底相互作用极大地放宽了晶格匹配限制。然而，弱吸附原子 - 衬底相互作用也导致在引导晶体生长结构方面效率低下，将其在外延生长中限制为单一取向。在这项工作中，我们提出了一种畴匹配策略来指导二维衬底上钙钛矿型晶体的外延生长，并且我们已经通过适用的过渡结构设计证明了在云母衬底上选择性沉积高度（001）、（110）和（111）取向的外延FeN薄膜。我们的工作使得在同一衬底上实现和控制范德华外延的不同取向成为可能。
