Yang Shuo, Wang Chuqi, Ma Xiaoxi, Wang Chuang, Dong Yujuan, Dong Enlai, Zhu Ge, Xin Shuangyu
College of Chemistry and Materials Engineering, Bohai University, Jinzhou, 121000, P. R. China.
Key Laboratory of New Energy and Rare Earth Resource Utilization of State Ethnic Affairs Commission, College of Physics and Materials Engineering, Dalian Minzu University, 18 Liaohe West Road, Dalian, 116600, P. R. China.
Dalton Trans. 2023 Aug 1;52(30):10481-10488. doi: 10.1039/d3dt01812a.
With the development of solid-state lighting, full-spectrum lighting has gradually received extensive attention. Until now, Bi-doped narrow-band blue phosphors have been widely reported, but broadband green-yellow Bi-doped luminescent materials generated by metal-to-metal charge transfer have been rarely reported. In this study, a Bi ion doped germanate luminescent material CsAlGeO:%Bi (1 ≤ ≤ 11) is synthesized by a high-temperature sintering method. The phosphor can generate a broad green-yellow band peaking at 535 nm with a full width at half maximum of 165 nm under ultraviolet radiation. Through the analysis of the coordination environment, photoluminescence spectra and decay curves, the broadband emission spectra of Bi ions are proved to be generated by the metal-to-metal charge transfer state and the P → S transition. By using theoretical research, luminescence kinetics, and Gaussian fitting, the luminescence mechanism of Bi is examined. Meanwhile, the high quantum efficiency and superior thermal stability prove that the phosphor can be used as an efficient luminescent material in the field of full-spectrum LED devices.
随着固态照明的发展，全光谱照明逐渐受到广泛关注。到目前为止，双掺杂窄带蓝色荧光粉已被广泛报道，但通过金属到金属电荷转移产生的宽带绿黄色双掺杂发光材料鲜有报道。在本研究中，采用高温烧结法合成了一种铋离子掺杂锗酸盐发光材料CsAlGeO:%Bi(1≤≤11)。该荧光粉在紫外辐射下可产生一个峰值位于535nm、半高宽为165nm的宽绿黄色带。通过对配位环境、光致发光光谱和衰减曲线的分析，证明了铋离子的宽带发射光谱是由金属到金属电荷转移态和P→S跃迁产生的。通过理论研究、发光动力学和高斯拟合，研究了铋的发光机制。同时，高量子效率和优异的热稳定性证明该荧光粉可作为全光谱LED器件领域的高效发光材料。
