School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou, China.
School of Electronics and Electrical Engineering, Zhaoqing University, Zhaoqing City, Guangdong Province, China.
Luminescence. 2024 Oct;39(10):e4907. doi: 10.1002/bio.4907.
As one of the fundamental physical quantities, temperature is extremely important in various fields. In order to study the temperature sensing characteristics of dual-emitting center phosphors, Bi-doped and Bi/Sm-doped SrGaGeO phosphors were synthesized by high-temperature solid-phase method. Under 312 nm excitation, the SrGaGeO:Bi phosphor exhibits a blue broadband emission corresponding to the P → S transition of Bi ions. By testing the temperature change spectrum of phosphors, it was found that Bi exhibited strong thermal sensitivity. However, due to the fact that single ion doped phosphors are easily affected by other factors when applied to the field of temperature sensing, based on the thermal sensitivity of Bi, Sm with low temperature sensitivity was selected as the co-doped ion, and it was found that the two ions had different thermal quenching characteristics when the temperature change spectrum was tested. Using the temperature detection method based on the fluorescence intensity ratio (FIR) of the dual emission centers, it was found that the best absolute sensitivity S was 3.125% K and the maximum relative sensitivity S was 1.275% K in the range of 303-423 K. These results show that SrGaGeO:Bi/Sm phosphors have broad application prospects in the field of optical temperature sensing.
作为基本物理量之一，温度在各个领域都极为重要。为了研究双发射中心荧光粉的温度传感特性，采用高温固相法合成了 Bi 掺杂和 Bi/Sm 共掺杂 SrGaGeO 荧光粉。在 312nm 激发下，SrGaGeO:Bi 荧光粉呈现出对应于 Bi 离子 P→S 跃迁的宽带蓝色发射。通过测试荧光粉的温度变化谱，发现 Bi 表现出很强的热灵敏度。然而，由于单离子掺杂荧光粉在应用于温度传感领域时容易受到其他因素的影响，基于 Bi 的热灵敏度，选择低温灵敏度的 Sm 作为共掺杂离子，并发现当测试温度变化谱时，两个离子具有不同的热猝灭特性。利用双发射中心荧光强度比（FIR）的温度检测方法，发现在 303-423 K 范围内，最佳的绝对灵敏度 S 为 3.125% K，最大的相对灵敏度 S 为 1.275% K。这些结果表明 SrGaGeO:Bi/Sm 荧光粉在光学温度传感领域具有广阔的应用前景。
