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采用原子层沉积法生长的铱薄膜的成核与层闭合行为

Nucleation and Layer Closure Behavior of Iridium Films Grown Using Atomic Layer Deposition.

作者信息

Chung Hong Keun, Kim Han, Jeon Jihoon, Kim Sung-Chul, Won Sung Ok, Harada Ryosuke, Tsugawa Tomohiro, Chung Yoon Jang, Baek Seung-Hyub, Park Tae Joo, Kim Seong Keun

机构信息

Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 02792, South Korea.

Department of Materials Science and Chemical Engineering, Hanyang University, Ansan 15588, South Korea.

出版信息

J Phys Chem Lett. 2023 Jul 20;14(28):6486-6493. doi: 10.1021/acs.jpclett.3c01369. Epub 2023 Jul 13.

DOI:10.1021/acs.jpclett.3c01369
PMID:37439679
Abstract

Understanding the initial growth process during atomic layer deposition (ALD) is essential for various applications employing ultrathin films. This study investigated the initial growth of ALD Ir films using tricarbonyl-(1,2,3-η)-1,2,3-tri(-butyl)-cyclopropenyl-iridium and O. Isolated Ir nanoparticles were formed on the oxide surfaces during the initial growth stage, and their density and size were significantly influenced by the growth temperature and substrate surface, which strongly affected the precursor adsorption and surface diffusion of the adatoms. Higher-density and smaller nanoparticles were formed at high temperatures and on the AlO surface, forming a continuous Ir film with a smaller thickness, resulting in a very smooth surface. These findings suggest that the initial growth behavior of the Ir films affects their surface roughness and continuity and that a comprehensive understanding of this behavior is necessary for the formation of continuous ultrathin metal films.

摘要

了解原子层沉积(ALD)过程中的初始生长过程对于各种使用超薄膜的应用至关重要。本研究使用三羰基-(1,2,3-η)-1,2,3-三(-丁基)-环丙烯基铱和氧气研究了ALD铱薄膜的初始生长。在初始生长阶段,孤立的铱纳米颗粒在氧化物表面形成,其密度和尺寸受到生长温度和基底表面的显著影响,这强烈影响了前驱体的吸附和吸附原子的表面扩散。在高温下和AlO表面形成了更高密度和更小的纳米颗粒,形成了厚度更小的连续铱薄膜,从而得到非常光滑的表面。这些发现表明,铱薄膜的初始生长行为会影响其表面粗糙度和连续性,并且对这种行为的全面理解对于形成连续的超薄金属薄膜是必要的。

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