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一维窄带隙氧化锡材料:系统的高分辨率透射电子显微镜和拉曼分析

1D Narrow-Bandgap Tin Oxide Materials: Systematic High-Resolution TEM and Raman Analysis.

作者信息

Manseki Kazuhiro, Vafaei Saeid, Scott Loren, Hampton Katelyn, Hattori Nagisa, Ohira Kosuke, Prochotsky Kyle, Jala Stephen, Sugiura Takashi

机构信息

Graduate School of Natural Science and Technology, Gifu University, Yanagido 1-1, Gifu 501-1193, Japan.

Mechanical Engineering Department, Bradley University, 1501 West Bradley Avenue, Peoria, IL 61625, USA.

出版信息

Materials (Basel). 2023 Jun 23;16(13):4539. doi: 10.3390/ma16134539.

Abstract

We demonstrate for the first time the structure identification and narrow-bandgap property of 1D hybridized SnO/SnO nanoparticles derived from the calcination of a single-source precursor, i.e., tin(II) oxalate. Systematic Raman analysis together with high-resolution TEM (HR-TEM) measurements of the tin oxide samples were carried out by changing the calcination temperatures. These data revealed the simultaneous formation of 1D SnO/SnO in the rod particles that grew in air. It was also found that Sn(II) can be introduced by changing the concentration of Sn(II) salt in the precursor synthesis and the maximum temperature in calcination. Particles measuring 2030 nm were sintered to produce tin oxide nanorods including tin monoxide, SnO. Photoabsorption properties associated with the formation of the SnO/SnO nanocomposites were also investigated. Tauc plots indicate that the obtained tin oxide samples had a lower bandgap of 2.93.0 eV originating from SnO in addition to a higher bandgap of around 3.5~3.7 eV commonly observed for SnO. Such 1D SnO/SnO hybrids via tin oxalate synthesis with this optical property would benefit new materials design for photoenergy conversion systems, such as photocatalysts.

摘要

我们首次展示了通过单源前驱体(即草酸亚锡)煅烧得到的一维杂化SnO/SnO纳米颗粒的结构鉴定和窄带隙特性。通过改变煅烧温度,对氧化锡样品进行了系统的拉曼分析以及高分辨率透射电子显微镜(HR-TEM)测量。这些数据揭示了在空气中生长的棒状颗粒中同时形成了一维SnO/SnO。还发现,通过改变前驱体合成中Sn(II)盐的浓度和煅烧的最高温度,可以引入Sn(II)。将尺寸为2030 nm的颗粒烧结以制备包含一氧化锡SnO的氧化锡纳米棒。还研究了与SnO/SnO纳米复合材料形成相关的光吸收特性。陶克图表明,除了SnO通常观察到的约3.53.7 eV的较高带隙外,所获得的氧化锡样品还具有源自SnO的2.9~3.0 eV的较低带隙。通过草酸亚锡合成得到的具有这种光学性质的一维SnO/SnO杂化物将有利于光能量转换系统(如光催化剂)的新材料设计。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3dba/10342238/4a85b52d43da/materials-16-04539-g001.jpg

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