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ZnReCrSe 单晶的合成、结构及物理化学特性

Synthesis, Structure, and Physicochemical Characteristics of ZnReCrSe Single Crystals.

作者信息

Jendrzejewska Izabela, Groń Tadeusz, Kusz Joachim, Stokłosa Zbigniew, Pietrasik Ewa, Goryczka Tomasz, Sawicki Bogdan, Goraus Jerzy, Jampilek Josef, Witkowska-Kita Beata

机构信息

Institute of Chemistry, University of Silesia in Katowice, 40-007 Katowice, Poland.

Institute of Physics, University of Silesia in Katowice, 40-007 Katowice, Poland.

出版信息

Materials (Basel). 2023 Jun 24;16(13):4565. doi: 10.3390/ma16134565.

Abstract

This study aimed to obtain and investigate ZnCrSe single crystals doped with rhenium. The single crystals were obtained by applying chemical vapour transport. An X-ray study confirmed the cubic (Fd3¯m) structure of the tested crystals. Thermal, magnetic, electrical, and specific heat measurements accurately determined the physicochemical characteristics, which revealed that the obtained single crystals are -type semiconductors with antiferromagnetic order below the Néel temperature = 21.7 K. The Debye temperature had a value of 295 K. The substitution of Re-paramagnetic ions, possessing a screened 5-shell, in place of Zn-diamagnetic ions, caused an increase in the activation energy, Fermi energy, and Fermi temperature compared to the pure ZnCrSe. The boost of the magnetic field induced a shift of towards lower temperatures and a spin fluctuation peak visible at H = 40 and 50 kOe. The obtained single crystals are thermally stable up to 1100 °C.

摘要

本研究旨在获得并研究掺铼的ZnCrSe单晶。通过化学气相传输法获得单晶。X射线研究证实了测试晶体的立方(Fd3¯m)结构。热学、磁学、电学和比热测量精确地确定了其物理化学特性,结果表明所获得的单晶是n型半导体,在奈尔温度TN = 21.7 K以下具有反铁磁序。德拜温度为295 K。用具有屏蔽5壳层的顺磁离子Re取代抗磁离子Zn,与纯ZnCrSe相比,导致活化能、费米能和费米温度增加。磁场增强导致TN向更低温度移动,并且在H = 40和50 kOe时可见自旋涨落峰。所获得的单晶在高达1100℃时具有热稳定性。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1829/10342625/1ceb3dbefe42/materials-16-04565-g001.jpg

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