Jendrzejewska Izabela, Groń Tadeusz, Kusz Joachim, Stokłosa Zbigniew, Pietrasik Ewa, Goryczka Tomasz, Sawicki Bogdan, Goraus Jerzy, Jampilek Josef, Witkowska-Kita Beata
Institute of Chemistry, University of Silesia in Katowice, 40-007 Katowice, Poland.
Institute of Physics, University of Silesia in Katowice, 40-007 Katowice, Poland.
Materials (Basel). 2023 Jun 24;16(13):4565. doi: 10.3390/ma16134565.
This study aimed to obtain and investigate ZnCrSe single crystals doped with rhenium. The single crystals were obtained by applying chemical vapour transport. An X-ray study confirmed the cubic (Fd3¯m) structure of the tested crystals. Thermal, magnetic, electrical, and specific heat measurements accurately determined the physicochemical characteristics, which revealed that the obtained single crystals are -type semiconductors with antiferromagnetic order below the Néel temperature = 21.7 K. The Debye temperature had a value of 295 K. The substitution of Re-paramagnetic ions, possessing a screened 5-shell, in place of Zn-diamagnetic ions, caused an increase in the activation energy, Fermi energy, and Fermi temperature compared to the pure ZnCrSe. The boost of the magnetic field induced a shift of towards lower temperatures and a spin fluctuation peak visible at H = 40 and 50 kOe. The obtained single crystals are thermally stable up to 1100 °C.
本研究旨在获得并研究掺铼的ZnCrSe单晶。通过化学气相传输法获得单晶。X射线研究证实了测试晶体的立方(Fd3¯m)结构。热学、磁学、电学和比热测量精确地确定了其物理化学特性,结果表明所获得的单晶是n型半导体,在奈尔温度TN = 21.7 K以下具有反铁磁序。德拜温度为295 K。用具有屏蔽5壳层的顺磁离子Re取代抗磁离子Zn,与纯ZnCrSe相比,导致活化能、费米能和费米温度增加。磁场增强导致TN向更低温度移动,并且在H = 40和50 kOe时可见自旋涨落峰。所获得的单晶在高达1100℃时具有热稳定性。