Zhang Zhiyuan, Xiang Yuqi, Zhu Zhihong
College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano Optoelectronic Information Materials and Devices, National University of Defense Technology, 410073 Changsha, China.
Nanhu Laser Laboratory, National University of Defense Technology, Changsha 410073, China.
Nanomaterials (Basel). 2023 Jul 7;13(13):2023. doi: 10.3390/nano13132023.
Some high-index facets of BiVO, such as (012), (210), (115), (511), (121), (132) and (231), exhibit much better photocatalytic performance than conventional (010) and (110) surfaces for water splitting. However, the detailed mechanisms and stability of improved photocatalytic performance for these high-index BiVO surfaces are still not clear, which is important for designing photocatalysts with high efficiency. Here, based on first principle calculation, we carried out a systematic theoretical research on BiVO with different surfaces, especially high-index facets. The results show that all of the high-index facets in our calculated systems show an n-type behavior, and the band edge positions indicate that all of the high-index facets have enough ability to produce O without external bias. Electronic structures, band alignments and formation enthalpy indicate that (012), (115) and (132) could be equivalent to (210), (511) and (231), respectively, in the calculation. Oxidation and reduction potential show that only (132)/(231) is stable without strongly oxidative conditions, and the Gibbs free energy indicates that (012)/(210), (115)/(511), (121) and (132)/(231) have lower overpotential than (010) and (110). Our calculation is able to unveil insights into the effects of the surface, including electronic structures, overpotential and stability during the reaction process.
BiVO₄的一些高指数晶面,如(012)、(210)、(115)、(511)、(121)、(132)和(231),在光催化水分解方面表现出比传统的(010)和(110)表面更好的性能。然而,这些高指数BiVO₄表面光催化性能提高的详细机制和稳定性仍不清楚,这对于设计高效光催化剂很重要。在此,基于第一性原理计算,我们对具有不同表面,特别是高指数晶面的BiVO₄进行了系统的理论研究。结果表明,我们计算体系中的所有高指数晶面均表现出n型行为,能带边缘位置表明所有高指数晶面在无外部偏压的情况下都有足够的能力产生O₂。电子结构、能带排列和生成焓表明,在计算中(012)、(115)和(132)可能分别等同于(210)、(511)和(231)。氧化还原电位表明,只有(132)/(231)在没有强氧化条件下是稳定的,吉布斯自由能表明(012)/(210)、(115)/(511)、(121)和(132)/(231)的过电位低于(010)和(110)。我们的计算能够揭示表面效应的见解,包括反应过程中的电子结构、过电位和稳定性。