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铟锡氧化物纳米薄膜中线性和非线性近零介电常数特性的制造可调性

Manufacturing-Enabled Tunability of Linear and Nonlinear Epsilon-Near-Zero Properties in Indium Tin Oxide Nanofilms.

作者信息

Huang Chenxingyu, Peng Siwei, Liu Xuanyi, Wu Jiaye, Fu Hongyan, Lu Lei, Zhang Shengdong, Li Qian

机构信息

School of Electronic and Computer Engineering, Peking University, Shenzhen 518055, China.

Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China.

出版信息

ACS Appl Mater Interfaces. 2023 Jul 26;15(29):35186-35195. doi: 10.1021/acsami.3c06270. Epub 2023 Jul 14.

Abstract

Epsilon-near-zero (ENZ) materials have attracted great interest due to their exotic linear and nonlinear responses, which makes it significant to tune ENZ wavelengths for wavelength-dependent applications. However, studies to achieve tunability in a wide spectral range and link the fabrication parameters with linear and nonlinear ENZ properties have been uncovered. ENZ indium tin oxide (ITO) nanofilms are fabricated by magnetron sputtering, through which the control of ENZ properties is demonstrated. Factors in the sputtering process, such as the gas ratio and annealing, have a great impact on the ITO samples. Tunable ENZ parameters are listed to provide a beneficial database for ENZ ITO, mainly attributed to the change of carrier concentration. The influence of ENZ parameters on optical characteristics via annealing treatment is further explored. The ENZ wavelength is blue-shifted by 609 nm, and the intrinsic loss is reduced by 63.2%, while the ITO samples exhibit better linear scattering properties and stronger field intensity enhancement. Additionally, the laser testing system illustrates the change from reverse saturable absorption to saturable absorption with an absolute modulation depth of 21.9%, improved by 222.1%, and the nonlinear refractive index and nonlinear absorption coefficient β are 2.07 × 10 m W and -3.16 × 10 m W for post-annealed ITO samples, respectively. The proposed sputtering protocol offers a feasible technique to control the linear and nonlinear ENZ performance, which has great potential in laser technology and nanophotonics.

摘要

近零介电常数(ENZ)材料因其奇异的线性和非线性响应而备受关注,这使得针对波长相关应用来调谐ENZ波长具有重要意义。然而,实现宽光谱范围内的可调谐性并将制备参数与线性和非线性ENZ特性联系起来的研究尚未见报道。通过磁控溅射制备了ENZ氧化铟锡(ITO)纳米薄膜,并展示了对ENZ特性的控制。溅射过程中的因素,如气体比例和退火,对ITO样品有很大影响。列出了可调谐的ENZ参数,为ENZ ITO提供了一个有益的数据库,这主要归因于载流子浓度的变化。进一步探讨了通过退火处理ENZ参数对光学特性的影响。ENZ波长蓝移了609 nm,本征损耗降低了63.2%,同时ITO样品表现出更好的线性散射特性和更强的场强增强。此外,激光测试系统表明,从反向饱和吸收到饱和吸收的变化,绝对调制深度为21.9%,提高了222.1%,退火后ITO样品的非线性折射率 和非线性吸收系数β分别为2.07×10 m W和 -3.16×10 m W。所提出的溅射方案提供了一种控制线性和非线性ENZ性能的可行技术,在激光技术和纳米光子学中具有巨大潜力。

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