Wu Jiaye, Wang Gang, Clementi Marco, Zhou Ji, Huang Chenxingyu, Liu Xuanyi, Fu H Y, Li Qian, Brès Camille-Sophie
École Polytechnique Fédérale de Lausanne (EPFL), Photonic Systems Laboratory (PHOSL), STI-IEM, Station 11, Lausanne CH-1015, Switzerland.
Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China.
ACS Photonics. 2024 Dec 5;12(3):1276-1283. doi: 10.1021/acsphotonics.4c01322. eCollection 2025 Mar 19.
Epsilon-near-zero (ENZ) nanophotonic devices with zero permittivity are known to exhibit adiabatic frequency translation via temporal refraction under extracavity excitation by intense light sources, which are however hard to integrate on-chip owing to a high demand for energy density. As this class of complementary-metaloxide-semiconductor-compatible materials is progressing toward on-chip photonic integration, a more versatile solution with less intensity requirements needs to be further explored. Here, for the first time, by leveraging the abundant frequency mode resources inside a resonant cavity, we experimentally demonstrate the realization of input-dependent dual-range frequency switching via a single intracavity ENZ element. By utilizing the linear and nonlinear effects induced by ENZ, the system can perform a small 279.73 GHz as well as a 13-octave-span larger (3.63-THz) mode-locked frequency shift at 196 and 192 THz, respectively, under a pulse energy 2 orders of magnitude lower than extracavity schemes with a conversion efficiency (in %frequency shift per unit energy density per unit material thickness) also 2 orders of magnitude higher. Additionally, we report for the first time the real-time observation of the intracavity ENZ frequency switching operation, proving that the mechanism differs from pure ENZ time refraction. We further discuss that by encoding the states of two intracavity components, the optical system can program eight types of different 1- and 2-operand logic functions, including four complex noncommutative ones. This work extends the understanding of ENZ photonics beyond extracavity scenarios. The proposed solution could be extended to photonic integration with a potential for novel optical logic gates and photonic computing designs as an efficient and simplified alternative to microelectronic counterparts.
具有零介电常数的近零介电常数(ENZ)纳米光子器件在强光源的腔外激发下,通过时间折射表现出绝热频率转换,然而由于对能量密度的高要求,这类器件很难集成在芯片上。随着这类与互补金属氧化物半导体兼容的材料朝着片上光子集成发展,需要进一步探索一种对强度要求较低的更通用解决方案。在此,我们首次利用谐振腔内丰富的频率模式资源,通过实验证明了通过单个腔内ENZ元件实现与输入相关的双范围频率切换。通过利用ENZ诱导的线性和非线性效应,该系统在脉冲能量比腔外方案低2个数量级的情况下,分别在196和192太赫兹处能够执行小至279.73吉赫兹以及大13个倍频程跨度(3.63太赫兹)的锁模频率偏移,且转换效率(每单位材料厚度每单位能量密度的频率偏移百分比)也高2个数量级。此外,我们首次报告了腔内ENZ频率切换操作的实时观测结果,证明其机制不同于纯ENZ时间折射。我们进一步讨论,通过对两个腔内组件的状态进行编码,光学系统可以编程实现八种不同的单操作数和双操作数逻辑功能,包括四种复杂的非交换逻辑功能。这项工作扩展了对ENZ光子学在腔外场景之外的理解。所提出的解决方案可扩展到光子集成,有望用于新型光逻辑门和光子计算设计,作为微电子对应方案的一种高效且简化的替代方案。