Jiang Hang, Zhao Yuanan, Ma Hao, Wu Yi, Chen Meiling, Wang Mengxia, Zhang Weili, Peng Yujie, Leng Yuxin, Cao Zhaoliang, Shao Jianda
Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, People's Republic of China.
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China.
ACS Nano. 2022 Aug 23;16(8):12878-12888. doi: 10.1021/acsnano.2c05139. Epub 2022 Jul 29.
Ultrafast all-optical switches based on epsilon-near-zero (ENZ)-enhanced nonlinear refraction in transparent conducting oxides have achieved exciting results in realizing large absolute modulations. However, broad-band, polarization-independent, and wide-angle ultrafast all-optical switches have been challenging to produce, due to the inherent narrow band, polarization-dependent, and angle-dependent characteristics of the ENZ effect. To this end, we propose an ultrafast all-optical switch based on the enhanced nonlinear absorption of corrugated indium tin oxide (ITO) thin films. Taking advantage of the perfect absorption and localized field enhancement of the ENZ and localized surface plasmon resonance modes, we significantly enhanced the nonlinear absorption of the corrugated ITO film in the 1450-1650 nm telecom band. The experimental results show that the nonlinear saturable absorption coefficient of the corrugated ITO film at 1450 nm was as high as -1.5 × 10 cm GW, enabling all-optical switching to obtain an extinction ratio of 14.32 dB and an ultrafast switching time of 350 fs at a pump fluence of 18.51 mJ cm. Furthermore, the all-optical switch achieved an extinction ratio of over 15 dB and an insertion loss of approximately 2.6 dB within the 200 nm absorption band and exhibited polarization-independent and wide-angle features. The ultrafast temporal response can be attributed to intraband transient bleaching of the corrugated ITO film. Our findings demonstrate that corrugated ENZ films can overcome the inherent narrow-band, polarization-dependent, and angle-dependent problems of natural ENZ materials without increasing the response time, making them a potential ENZ ultrafast all-optical switching material platform.
基于透明导电氧化物中近零介电常数(ENZ)增强的非线性折射的超快全光开关在实现大的绝对调制方面取得了令人兴奋的成果。然而,由于ENZ效应固有的窄带、偏振依赖和角度依赖特性,宽带、偏振无关和广角超快全光开关的制造一直具有挑战性。为此,我们提出了一种基于波纹状铟锡氧化物(ITO)薄膜增强非线性吸收的超快全光开关。利用ENZ和局域表面等离子体共振模式的完美吸收和局域场增强,我们显著增强了波纹状ITO薄膜在1450 - 1650 nm电信波段的非线性吸收。实验结果表明,波纹状ITO薄膜在1450 nm处的非线性饱和吸收系数高达 -1.5×10 cm GW,在泵浦能量密度为18.51 mJ cm时,全光开关能够获得14.32 dB的消光比和350 fs的超快开关时间。此外,该全光开关在200 nm吸收带内实现了超过15 dB的消光比和约2.6 dB的插入损耗,并表现出偏振无关和广角特性。超快的时间响应可归因于波纹状ITO薄膜的带内瞬态漂白。我们的研究结果表明,波纹状ENZ薄膜可以在不增加响应时间的情况下克服天然ENZ材料固有的窄带、偏振依赖和角度依赖问题,使其成为一种潜在的ENZ超快全光开关材料平台。