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用于非易失性存储器和突触学习应用的二氧化钛纳米球的溶剂热合成。

Solvothermal synthesis of TiOnanospheres for non-volatile memory and synaptic learning applications.

作者信息

Nikam Ankita S, Kamble Girish U, Patil Amitkumar R, Patil Sharad B, Sheikh Arif D, Takaloo Ashkan V, Gaikwad Pawan K, Kamat Rajanish K, Kim Jin H, Dongale Tukaram D

机构信息

Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur 416004, India.

Optoelectronics Convergence Research Center and Department of Materials Science and Engineering, Chonnam National University, 300, Yongbong-Dong, Buk-Gu, Gwangju, 61186, Republic of Korea.

出版信息

Nanotechnology. 2023 Aug 2;34(42). doi: 10.1088/1361-6528/ace830.

DOI:10.1088/1361-6528/ace830
PMID:37463566
Abstract

In this study, we used the one-pot solvothermal method to synthesize the TiOnanospheres (NSs) and used them for non-volatile memory and neuromorphic computing applications. Several analytical tools were used to understand the structural, optical, morphological, and compositional characteristics of synthesized TiONSs. The tetragonal crystal structure of anatase TiOwas formed, according to the Rietveld refined x-ray diffraction results. The NS morphology was confirmed by field emission scanning electron microscopy and transmission electron microscopy images. X-ray photoelectron spectroscopy was probed to understand the elemental composition and electronic states of the TiONSs. We specifically looked at the impact of reaction time on the structural, optical, morphological, compositional, and resistive switching (RS) properties of TiONSs. The fabricated devices (Ag/TiONSs/FTO) exhibit bipolar RS behavior. The optimized RS device shows good endurance (5000 cycles) and memory retention (5000 s) properties. Moreover, fabricated devices showed double-valued charge-flux characteristics, whereas charge transport was caused by the Ohmic and space charge-limited current mechanisms. Additionally, the optimized device can mimic various synaptic characteristics including potentiation-depression, excitatory post-synaptic current, and paired-pulse facilitation.

摘要

在本研究中,我们采用一锅溶剂热法合成了二氧化钛纳米球(NSs),并将其用于非易失性存储器和神经形态计算应用。使用了几种分析工具来了解合成的二氧化钛纳米球的结构、光学、形态和组成特征。根据Rietveld精修X射线衍射结果,形成了锐钛矿型TiO₂的四方晶体结构。通过场发射扫描电子显微镜和透射电子显微镜图像确认了纳米球的形态。利用X射线光电子能谱来了解二氧化钛纳米球的元素组成和电子态。我们特别研究了反应时间对二氧化钛纳米球的结构、光学、形态、组成和电阻开关(RS)特性的影响。制备的器件(Ag/二氧化钛纳米球/FTO)表现出双极电阻开关行为。优化后的电阻开关器件具有良好的耐久性(5000次循环)和数据保持性(5000秒)。此外,制备的器件表现出双值电荷通量特性,而电荷传输是由欧姆和空间电荷限制电流机制引起的。此外,优化后的器件可以模拟各种突触特性,包括增强-抑制、兴奋性突触后电流和双脉冲易化。

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