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高压下富氮2,4,6-三叠氮基-1,3,5-三嗪的结构、振动和电子性质

Structural, vibrational and electronic properties of nitrogen-rich 2,4,6-triazide-1,3,5-triazine under high pressure.

作者信息

Xie Zhi-Ming, Wang Ting-Wei, Du Yu-Bing, Lu Zu-Jia, Wu Xiao-Wei, Chen Ya-Bin, Zhang Jian-Guo

机构信息

State Key Laboratory of Explosion Science and Technology, Beijing Institute of Technology, Beijing, 100081, China.

Advanced Research Institute of Multidisciplinary Sciences, Beijing Institute of Technology, Beijing, 100081, China.

出版信息

J Mol Model. 2023 Jul 19;29(8):257. doi: 10.1007/s00894-023-05651-z.

DOI:10.1007/s00894-023-05651-z
PMID:37468798
Abstract

CONTEXT AND RESULTS

2,4,6-triazide-1,3,5-triazine (TAT) has received widespread attention for its great potential to synthesize or convert to nitrogen-rich high energy density materials (HEDMs). The TAT structure alteration in the compression process up to 30 GPa has characteristics as follows: (a) [N] groups straighten; (b) [N] groups gather toward the six-membered C-N heterocycles. At about 5 GPa, Raman peak split at 700 cm was observed both in calculation and in-situ Raman experiment, which is caused by pressure-induced intramolecular stress. Besides, the broad band of the amorphous two-dimensional C=N network (centered at 1630 cm) occurred at about 12 GPa. Meantime, the study on electronic features suggests the pressure-induced deformation in TAT molecular structure cause the discontinuous change of band gap at about 4.5 GPa and 8.0 GPa, respectively.

COMPUTATIONAL AND THEORETICAL TECHNIQUES

The static compression process of TAT was explored in the range of 0-30 GPa by using dispersion corrected density functional theory (DFT-D) calculations combined with in-situ Raman experiment. The GGA/PBE+G06 method that has less errors than other calculation methods was used to predict the geometry structure, vibrational properties and electronic structure of TAT under pressure.

摘要

背景与结果

2,4,6-三叠氮基-1,3,5-三嗪(TAT)因其在合成或转化为富氮高能量密度材料(HEDM)方面的巨大潜力而受到广泛关注。在高达30 GPa的压缩过程中,TAT结构变化具有以下特征:(a)[N]基团伸直;(b)[N]基团向六元C-N杂环聚集。在约5 GPa时,计算和原位拉曼实验均观察到700 cm处的拉曼峰分裂,这是由压力诱导的分子内应力引起的。此外,非晶二维C=N网络的宽带(以1630 cm为中心)在约12 GPa时出现。同时,对电子特性的研究表明,TAT分子结构中的压力诱导变形分别在约4.5 GPa和8.0 GPa处导致带隙的不连续变化。

计算与理论技术

采用色散校正密度泛函理论(DFT-D)计算结合原位拉曼实验,在0 - 30 GPa范围内研究了TAT的静态压缩过程。使用比其他计算方法误差更小的GGA/PBE+G06方法预测了TAT在压力下的几何结构、振动性质和电子结构。

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