基于遗传算法的数字微镜器件无掩膜光刻光学邻近校正

Genetic algorithm-based optical proximity correction for DMD maskless lithography.

作者信息

Yang Zhuojun, Lin Jie, Liu Liwen, Zhu Zicheng, Zhang Rui, Wen Shaofeng, Yin Yi, Lan Changyong, Li Chun, Liu Yong

出版信息

Opt Express. 2023 Jul 3;31(14):23598-23607. doi: 10.1364/OE.493665.

Abstract

We present an optical proximity correction (OPC) method based on a genetic algorithm for reducing the optical proximity effect-induced pattern distortion in digital micromirror device (DMD) maskless lithography. Via this algorithm-assisted grayscale modulation of the initial mask at the pixel level, the exposure pattern can be enhanced significantly. Actual exposure experiments revealed that the rate of matching between the final exposure pattern and the mask pattern can be increased by up to 20%. This method's applicability to complex masks further demonstrates its universality for mask pattern optimization. We believe that our algorithm-assisted OPC could be highly helpful for high-fidelity and efficient DMD maskless lithography for microfabrication.

摘要

我们提出了一种基于遗传算法的光学邻近校正（OPC）方法，用于减少数字微镜器件（DMD）无掩膜光刻中光学邻近效应引起的图案失真。通过该算法辅助在像素级别对初始掩膜进行灰度调制，可以显著增强曝光图案。实际曝光实验表明，最终曝光图案与掩膜图案之间的匹配率可提高多达20%。该方法对复杂掩膜的适用性进一步证明了其在掩膜图案优化方面的通用性。我们相信，我们的算法辅助OPC对于用于微加工的高保真和高效DMD无掩膜光刻会非常有帮助。