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用于无掩模光刻的基于强度调制的光学邻近优化。

Intensity modulation based optical proximity optimization for the maskless lithography.

作者信息

Liu Jianghui, Liu Junbo, Deng Qingyuan, Feng Jinhua, Zhou Shaolin, Hu Song

出版信息

Opt Express. 2020 Jan 6;28(1):548-557. doi: 10.1364/OE.381503.

Abstract

The undesirable optical proximity effect (OPE) that appeared in the digital micro-mirrors device (DMD) based maskless lithography directly influences the final exposure pattern and decreases the lithography quality. In this manuscript, a convenient method of intensity modulation applied for the maskless lithography is proposed to optimize such an effect. According to the pulse width modulation based image recognition of DMD, we replaced the digital binary mask with a special digital grayscale mask to modulate the UV intensity distribution to be closer to the expectation in a way of point-by-point modification. The exposure result applying the grayscale mask has a better consistency with the design pattern than that for the case in which the original binary mask is used. The effectiveness of this method was analyzed by the image subtraction technique. Experimental data revealed that the matching rate between the exposure pattern and the mask pattern has been improved from 78% to 91%. Besides, more experiments have been conducted to verify the validity of this method for the optical proximity optimization and its potential in the high-fidelity DMD based maskless lithography.

摘要

基于数字微镜器件(DMD)的无掩模光刻中出现的不良光学邻近效应(OPE)直接影响最终的曝光图案,并降低光刻质量。在本论文中,提出了一种应用于无掩模光刻的简便强度调制方法来优化这种效应。根据基于脉冲宽度调制的DMD图像识别,我们用特殊的数字灰度掩模取代了数字二进制掩模,以逐点修改的方式将紫外光强度分布调制得更接近预期。应用灰度掩模的曝光结果与设计图案的一致性比使用原始二进制掩模的情况更好。通过图像减法技术分析了该方法的有效性。实验数据表明,曝光图案与掩模图案之间的匹配率从78%提高到了91%。此外,还进行了更多实验来验证该方法在光学邻近优化方面的有效性及其在基于高保真DMD的无掩模光刻中的潜力。

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