Sumaiya Saima A, Demiroglu Ilker, Caylan Omer R, Buke Goknur Cambaz, Sevik Cem, Baykara Mehmet Z
Department of Mechanical Engineering, University of California Merced, Merced, California 95343, United States.
Department of Mechanical Engineering, Eskisehir Technical University, Eskisehir 26555, Turkey.
Langmuir. 2023 Aug 8;39(31):10788-10794. doi: 10.1021/acs.langmuir.3c00674. Epub 2023 Jul 26.
Thin transition metal carbides (TMCs) garnered significant attention in recent years due to their attractive combination of mechanical and electrical properties with chemical and thermal stability. On the other hand, a complete picture of how defects affect the physical properties and application potential of this emerging class of materials is lacking. Here, we present an atomic-resolution study of defects on thin crystals of molybdenum carbide (α-MoC) grown via chemical vapor deposition (CVD) by way of conductive atomic force microscopy (C-AFM) measurements under ambient conditions. Defects are characterized based on the type (enhancement/attenuation) and spatial extent (compact/extended) of the effect they have on the conductivity landscape of the crystal surfaces. calculations performed by way of density functional theory (DFT) are employed to gather clues about the identity of the defects.
近年来，薄过渡金属碳化物（TMCs）因其机械性能、电学性能与化学稳定性、热稳定性的诱人组合而备受关注。另一方面，对于缺陷如何影响这类新兴材料的物理性能和应用潜力，目前仍缺乏全面的认识。在此，我们通过在环境条件下利用导电原子力显微镜（C-AFM）测量，对通过化学气相沉积（CVD）生长的碳化钼（α-MoC）薄晶体上的缺陷进行了原子分辨率研究。根据缺陷对晶体表面电导率分布的影响类型（增强/衰减）和空间范围（紧凑/扩展）对其进行表征。利用密度泛函理论（DFT）进行的计算来收集有关缺陷性质的线索。
