Hager Antonia, Güniat Lucas, Morgan Nicholas, Ramanandan Santhanu Panikar, Rudra Alok, Piazza Valerio, Fontcuberta I Morral Anna, Dede Didem
Laboratory of Semiconductor Materials, Institute of Materials, École Polytechnique Fédérale de Lausanne, Switzerland.
Faculty of Basic Sciences, Institute of Physics, École Polytechnique Fédérale de Lausanne, Switzerland.
Nanotechnology. 2023 Aug 16;34(44). doi: 10.1088/1361-6528/acea87.
Semiconductor nanowires (NWs) in horizontal configuration could provide a path for scalable NW-based devices. Bottom-up large-scale manufacturing of these nanostructures by selective area epitaxy (SAE) relies on precise nanopatterning of various shapes on the growth masks. Electron beam lithography offers an extraordinary accuracy suited for the purpose. However, this technique is not economically viable for large production as it has a low throughput and requires high investment and operational costs. Nanoimprint lithography (NIL) has the potential to reduce fabrication time and costs significantly while requiring less sophisticated equipment. In this work, we utilize both thermal and UV NIL for patterning substrates for SAE, elucidating the advantages and disadvantages of each lithography technique. We demonstrate the epitaxial growth of Ge and GaAs NWs on these substrates, where we observe high-quality mono-crystalline structures. Even though both processes can produce small uniform structures suitable for SAE, our results show that UV NIL proves to be superior and enables reliable and efficient patterning of sub-100 nm mask features at the wafer scale.
水平配置的半导体纳米线（NWs）可为基于NW的可扩展器件提供一条途径。通过选择性区域外延（SAE）自下而上大规模制造这些纳米结构依赖于在生长掩模上精确制备各种形状的纳米图案。电子束光刻提供了适用于此目的的超高精度。然而，由于该技术产量低且需要高昂的投资和运营成本，因此对于大规模生产在经济上不可行。纳米压印光刻（NIL）有潜力显著减少制造时间和成本，同时所需设备不那么复杂。在这项工作中，我们利用热NIL和紫外NIL对用于SAE的衬底进行图案化，阐明每种光刻技术的优缺点。我们展示了Ge和GaAs NWs在这些衬底上的外延生长，在此我们观察到高质量的单晶结构。尽管这两种工艺都能产生适用于SAE的小尺寸均匀结构，但我们的结果表明紫外NIL被证明更优越，并且能够在晶圆尺度上对小于100 nm的掩模特征进行可靠且高效的图案化。
