在AlO(0001)衬底上生长的BiSrCoO薄膜的制备及激光诱导热电压效应

Preparation and Laser-Induced Thermoelectric Voltage Effect of BiSrCoO Thin Films Grown on AlO (0001) Substrate.

作者信息

Zou Ping, Lv Dan, Zhang Hui, Li Zhidong

机构信息

School of Materials Science and Engineering, Guizhou Minzu University, Guiyang 550025, China.

School of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, China.

出版信息

Materials (Basel). 2023 Jul 22;16(14):5165. doi: 10.3390/ma16145165.

DOI:10.3390/ma16145165

PMID:37512439

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC10385769/

Abstract

BiSrCoO thin films were grown on 10° vicinal-cut AlO (0001) single crystalline substrates by pulsed laser-deposition techniques with in situ annealing, post-annealing and non-annealing process, respectively. The pure phase BiSrCoO thin film was obtained with a non-annealing process. The result of X-ray diffraction showed that BiSrCoO thin film was obviously -axis preferred orientation. The laser-induced thermoelectric voltage signals were detected in BiSrCoO thin films, which originated from the anisotropy of the Seebeck coefficient. The maximum peak value of laser-induced thermoelectric voltage was strong and could reach as large as 0.44 V and the response time was 1.07 μs when the deposition time was 6 min. Furthermore, the peak voltage enhanced linearly with the single-pulse laser energy. These characteristics demonstrate that BiSrCoO thin film is also an excellent choice for laser energy/power detectors.

摘要

通过脉冲激光沉积技术，分别采用原位退火、后退火和无退火工艺，在10°斜切的AlO(0001)单晶衬底上生长BiSrCoO薄膜。通过无退火工艺获得了纯相BiSrCoO薄膜。X射线衍射结果表明，BiSrCoO薄膜具有明显的c轴择优取向。在BiSrCoO薄膜中检测到激光诱导的热电压信号，其源于塞贝克系数的各向异性。当沉积时间为6分钟时，激光诱导热电压的最大峰值很强，可达0.44 V，响应时间为1.07 μs。此外，峰值电压随单脉冲激光能量呈线性增强。这些特性表明BiSrCoO薄膜也是激光能量/功率探测器的理想选择。