Wang Xiaoyan, Liu Yanfei, Jia Yilin, Su Ningning, Wu Qiannan
School of Information and Communication Engineering, North University of China, Taiyuan 030051, China.
Center for Microsystem Integration, North University of China, Taiyuan 030051, China.
Micromachines (Basel). 2023 Jul 6;14(7):1381. doi: 10.3390/mi14071381.
A switchable ultra-wideband THz absorber based on vanadium dioxide was proposed, which consists of a lowermost gold layer, a PMI dielectric layer, and an insulating and surface vanadium dioxide layer. Based on the phase transition properties of vanadium dioxide, switching performance between ultra-broadband and narrowband can achieve a near-perfect absorption. The constructed model was simulated and analyzed using finite element analysis. Simulations show that the absorption frequency of vanadium dioxide above 90% is between 3.8 THz and 15.6 THz when the vanadium dioxide is in the metallic state. The broadband absorber has an absorption bandwidth of 11.8 THz, is insensitive to TE and TM polarization, and has universal incidence angle insensitivity. When vanadium dioxide is in the insulating state, the narrowband absorber has a Q value as high as 1111 at a frequency of 13.89 THz when the absorption is more excellent than 99%. The absorber proposed in this paper has favorable symmetry properties, excellent TE and TM wave insensitivity, overall incidence angle stability, and the advantages of its small size, ultra-widebands and narrowbands, and elevated Q values. The designed absorber has promising applications in multifunctional devices, electromagnetic cloaking, and optoelectronic switches.
提出了一种基于二氧化钒的可切换超宽带太赫兹吸收器，它由最底层的金层、聚甲基丙烯酰亚胺（PMI）介电层以及绝缘的表面二氧化钒层组成。基于二氧化钒的相变特性，超宽带和窄带之间的切换性能可实现近乎完美的吸收。使用有限元分析对构建的模型进行了模拟和分析。模拟结果表明，当二氧化钒处于金属态时，二氧化钒吸收率高于90%的频率范围在3.8太赫兹至15.6太赫兹之间。该宽带吸收器的吸收带宽为11.8太赫兹，对TE和TM极化不敏感，并且具有全入射角不敏感性。当二氧化钒处于绝缘态时，窄带吸收器在频率为13.89太赫兹、吸收率大于99%时，品质因数高达1111。本文提出的吸收器具有良好的对称特性、出色的TE和TM波不敏感性、整体入射角稳定性，以及尺寸小、超宽带和窄带、品质因数高的优点。所设计的吸收器在多功能器件、电磁隐身和光电器件开关方面具有广阔的应用前景。
