Peng Hao, Yang Ke, Huang Zhenxin, Chen Zhi
Appl Opt. 2022 Apr 10;61(11):3101-3106. doi: 10.1364/AO.454639.
Based on the impedance matching method, we have numerically demonstrated a broadband tunable multilayer structure in a terahertz (THz) regime. The switchable functional characteristics of the absorber can be achieved by utilizing the phase transition property of vanadium dioxide (). When is in the metallic state, the designed device behaves as a broadband absorber with an absorbance greater than 90% under normal incident from a 4.5 to 10 THz range. When is in the insulating state, the absorption in this band is down to near 0%. Moreover, this high absorption band shows a good polarization insensitive property and can be maintained over a range of incident angles up to 45°. Our proposed device exhibits the merits of wideband reconfigure absorbance in THz, and the absorber can be easily fabricated without involving any lithographic process, both of which are very attractive to potential THz applications such as sensing, camouflaging, and modulation of THz waves.
基于阻抗匹配方法，我们在太赫兹（THz）波段通过数值模拟展示了一种宽带可调谐多层结构。利用二氧化钒（）的相变特性可实现吸收体的可切换功能特性。当处于金属态时，所设计的器件在4.5至10太赫兹范围内垂直入射时表现为宽带吸收体，吸光度大于90%。当处于绝缘态时，该波段的吸收降至接近0%。此外，这个高吸收波段表现出良好的偏振不敏感特性，并且在高达45°的入射角范围内都能保持。我们提出的器件展现出在太赫兹波段宽带可重构吸光度的优点，并且该吸收体无需任何光刻工艺即可轻松制造，这两者对传感、伪装和太赫兹波调制等潜在太赫兹应用都非常有吸引力。
