Era Paavai, Jauhar Ro Mu, Kamalesh T, Prakash T, Siva V
Department of Physics, SIMATS School of Engineering, SIMATS, Chennai, 602 105, India.
Department of Physics, B.S. Abdur Rahman Crescent Institute of Science and Technology, Chennai, 600048, India.
Heliyon. 2023 Jul 14;9(7):e18311. doi: 10.1016/j.heliyon.2023.e18311. eCollection 2023 Jul.
Guanidinium isophthalate single crystals with dimensions 16 × 4 x 2 mm were prepared by the low temperature solvent evaporation method and growth kinetics with interfacial tension was discussed to bring out the growth parameters of guanidinium isophthalate single crystals. The harvested single crystals were utilized for various characterization studies like powder X-ray diffraction, optical transmission, photoluminescence, laser damage study and optical limiting studies. The visualization of varying potential regions on the surfaces to quantify short contacts were generated by Hirshfeld surface analysis. 2D fingerprint plots were analyzed, in which H ….H contact was found to be the most significant with 54.1%. Growth kinetics of the crystalline material was studied to reveal the nucleation process. Crystal samples prepared with reference to the solubility data were found to be free of inclusions and cracks and had maximum transmittance in the complete visible region. The electronic disorder of the crystal sample was reported in the form of Urbach energy. The PL spectra with the emission intensity provide the emission characteristic of the title compound. The major fundamental optical limit for a crystal material is experimentally measured and presented in the picosecond regime. Thus the present work contributes to the understanding of growth, structural, optical and electronic characteristics of the title guanidinium isophthalate single crystals for the fabrication of electro-optic devices in photonic industry.
采用低温溶剂蒸发法制备了尺寸为16×4×2 mm的间苯二甲酸胍单晶，并讨论了具有界面张力的生长动力学，以得出间苯二甲酸胍单晶的生长参数。收获的单晶用于各种表征研究，如粉末X射线衍射、光学透射、光致发光、激光损伤研究和光学限幅研究。通过Hirshfeld表面分析生成了表面上不同潜在区域的可视化图像，以量化短接触。分析了二维指纹图谱，其中H…H接触最为显著，占54.1%。研究了晶体材料的生长动力学以揭示成核过程。根据溶解度数据制备的晶体样品没有夹杂物和裂纹，并且在整个可见光区域具有最大透射率。以Urbach能量的形式报道了晶体样品的电子无序。具有发射强度的PL光谱提供了标题化合物的发射特性。实验测量了晶体材料在皮秒范围内的主要基本光学限幅。因此，目前的工作有助于理解用于光子工业中电光器件制造的标题间苯二甲酸胍单晶的生长、结构、光学和电子特性。
