Zahra Khadisha M, Byrne Conor, Li Zheshen, Hazeldine Kerry, Walton Alex S
Depatrment of Chemistry and Photon Science Institute, University of Manchester, United Kingdom.
ISA, Aarhus University, DK-8000 Aarhus C, Denmark.
Nanotechnology. 2023 Aug 22;34(45). doi: 10.1088/1361-6528/acedb5.
Heteroatom doping of graphene is a promising approach for tailoring its chemical and electronic properties-a prerequisite for many applications such as sensing, catalysis, and energy storage. Doping chemical vapour deposition (CVD) graphene with nitrogen during growth (doping) is a common strategy, but it produces a distribution of inequivalent dopant sites and requires substantial modifications to the CVD growth process. In this study, we demonstrate a novel and simple oxide-mediated approach to introduce nitrogen dopants into pre-existing CVD graphene (doping) which achieves comparable doping densities todoping methodologies. Furthermore, we demonstrate that thermal annealing of N-doped graphene can selectively remove pyridinic, retaining graphitic and pyrrolic nitrogen dopants, offering an attractive route to further modify graphene functionality. The methodologies we present are simple and scalable to precisely tailor graphene properties without the need to alter CVD growth protocols.
石墨烯的杂原子掺杂是一种很有前景的方法，可用于调整其化学和电子性质，这是传感、催化和能量存储等许多应用的先决条件。在生长过程中用氮对化学气相沉积（CVD）石墨烯进行掺杂是一种常见策略，但它会产生不等价掺杂位点的分布，并且需要对CVD生长过程进行大量修改。在本研究中，我们展示了一种新颖且简单的氧化物介导方法，将氮掺杂剂引入预先存在的CVD石墨烯中（掺杂），该方法实现了与掺杂方法相当的掺杂密度。此外，我们证明了氮掺杂石墨烯的热退火可以选择性地去除吡啶型氮，保留石墨型和吡咯型氮掺杂剂，这为进一步修饰石墨烯功能提供了一条有吸引力的途径。我们提出的方法简单且可扩展，能够精确调整石墨烯的性质，而无需改变CVD生长协议。
