Zhang Feng Fei, Aw Eva, Eaton Alexander G, Shutt Rebecca R C, Lim Juhwan, Kim Jung Ho, Macdonald Thomas J, Reyes Cesar Iii D L, Ashoka Arjun, Pandya Raj, Payton Oliver D, Picco Loren, Knapp Caroline E, Corà Furio, Rao Akshay, Howard Christopher A, Clancy Adam J
Department of Chemistry, University College London, London WC1E 6BT, U.K.
Department of Physics and Astronomy, University College London, London WC1E 6BT, U.K.
J Am Chem Soc. 2023 Aug 23;145(33):18286-18295. doi: 10.1021/jacs.3c03230. Epub 2023 Aug 8.
Quasi-1D nanoribbons provide a unique route to diversifying the properties of their parent 2D nanomaterial, introducing lateral quantum confinement and an abundance of edge sites. Here, a new family of nanomaterials is opened with the creation of arsenic-phosphorus alloy nanoribbons (AsPNRs). By ionically etching the layered crystal black arsenic-phosphorus using lithium electride followed by dissolution in amidic solvents, solutions of AsPNRs are formed. The ribbons are typically few-layered, several micrometers long with widths tens of nanometers across, and both highly flexible and crystalline. The AsPNRs are highly electrically conducting above 130 K due to their small band gap (ca. 0.035 eV), paramagnetic in nature, and have high hole mobilities, as measured with the first generation of AsP devices, directly highlighting their properties and utility in electronic devices such as near-infrared detectors, quantum computing, and charge carrier layers in solar cells.
准一维纳米带为其母体二维纳米材料的性能多样化提供了一条独特途径，引入了横向量子限制和大量边缘位点。在此，通过创建砷磷合金纳米带（AsPNRs）开启了一个新的纳米材料家族。通过使用氢化锂对层状晶体黑砷磷进行离子蚀刻，随后溶解在酰胺类溶剂中，形成了AsPNRs溶液。这些纳米带通常为几层，长度达几微米，宽度为几十纳米，兼具高柔韧性和结晶性。由于其小带隙（约0.035电子伏特），AsPNRs在130 K以上具有高导电性，本质上呈顺磁性，并且具有高空穴迁移率，正如在第一代AsP器件中所测量的那样，这直接凸显了它们在诸如近红外探测器、量子计算和太阳能电池中的电荷载流子层等电子器件中的性能和用途。
