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非绝热分子动力学中的芝诺效应与反芝诺效应

Zeno and Anti-Zeno Effects in Nonadiabatic Molecular Dynamics.

作者信息

Gumber Shriya, Prezhdo Oleg V

机构信息

Department of Chemistry, University of Southern California, Los Angeles, California 90089, United States.

Department of Physics and Astronomy, University of Southern California, Los Angeles, California 90089, United States.

出版信息

J Phys Chem Lett. 2023 Aug 17;14(32):7274-7282. doi: 10.1021/acs.jpclett.3c01831. Epub 2023 Aug 9.

DOI:10.1021/acs.jpclett.3c01831
PMID:37556319
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC10440816/
Abstract

Decoherence plays an important role in nonadiabatic (NA) molecular dynamics (MD) simulations because it provides a physical mechanism for trajectory hopping and can alter transition rates by orders of magnitude. Generally, decoherence effects slow quantum transitions, as exemplified by the quantum Zeno effect: in the limit of infinitely fast decoherence, the transitions stop. If the measurements are not sufficiently frequent, an opposite quantum anti-Zeno effect occurs, in which the transitions are accelerated with faster decoherence. Using two common NA-MD approaches, fewest switches surface hopping and decoherence-induced surface hopping, combined with analytic examination, we demonstrate that including decoherence into NA-MD slows down NA transitions; however, many realistic systems operate in the anti-Zeno regime. Therefore, it is important that NA-MD methods describe both Zeno and anti-Zeno effects. Numerical simulations of charge trapping and relaxation in graphitic carbon nitride suggest that time-dependent NA Hamiltonians encountered in realistic systems produce robust results with respect to errors in the decoherence time, a favorable feature for NA-MD simulations.

摘要

退相干在非绝热(NA)分子动力学(MD)模拟中起着重要作用,因为它为轨迹跳跃提供了一种物理机制,并且可以使跃迁速率改变几个数量级。一般来说,退相干效应会减缓量子跃迁,量子芝诺效应就是一个例子:在无限快退相干的极限情况下,跃迁会停止。如果测量不够频繁,就会出现相反的量子反芝诺效应,即跃迁会随着退相干加快而加速。通过使用两种常见的NA-MD方法,即最少开关表面跳跃法和退相干诱导表面跳跃法,并结合分析研究,我们证明将退相干纳入NA-MD会减缓NA跃迁;然而,许多实际系统处于反芝诺 regime。因此,NA-MD方法能够描述芝诺效应和反芝诺效应是很重要的。石墨相氮化碳中电荷俘获和弛豫的数值模拟表明,实际系统中遇到的含时NA哈密顿量对于退相干时间的误差会产生稳健的结果,这是NA-MD模拟的一个有利特征。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2a9a/10440816/f30fd07f8c13/jz3c01831_0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2a9a/10440816/d4b9c6a134e0/jz3c01831_0001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2a9a/10440816/67e4faf62cad/jz3c01831_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2a9a/10440816/ff2a6e14ae66/jz3c01831_0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2a9a/10440816/f30fd07f8c13/jz3c01831_0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2a9a/10440816/d4b9c6a134e0/jz3c01831_0001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2a9a/10440816/67e4faf62cad/jz3c01831_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2a9a/10440816/ff2a6e14ae66/jz3c01831_0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2a9a/10440816/f30fd07f8c13/jz3c01831_0004.jpg

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