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有机半导体中的电荷输运:非绝热分子动力学的视角。

Charge Transport in Organic Semiconductors: The Perspective from Nonadiabatic Molecular Dynamics.

机构信息

Department of Physics and Astronomy and Thomas Young Centre, University College London, London WC1E 6BT, United Kingdom.

出版信息

Acc Chem Res. 2022 Mar 15;55(6):819-830. doi: 10.1021/acs.accounts.1c00675. Epub 2022 Feb 23.

DOI:10.1021/acs.accounts.1c00675
PMID:35196456
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8928466/
Abstract

Organic semiconductors (OSs) are an exciting class of materials that have enabled disruptive technologies in this century including large-area electronics, flexible displays, and inexpensive solar cells. All of these technologies rely on the motion of electrical charges within the material and the diffusivity of these charges critically determines their performance. In this respect, it is remarkable that the nature of the charge transport in these materials has puzzled the community for so many years, even for apparently simple systems such as molecular single crystals: some experiments would better fit an interpretation in terms of a localized particle picture, akin to molecular or biological electron transfer, while others are in better agreement with a wave-like interpretation, more akin to band transport in metals.Exciting recent progress in the theory and simulation of charge carrier transport in OSs has now led to a unified understanding of these disparate findings, and this Account will review one of these tools developed in our laboratory in some detail: direct charge carrier propagation by quantum-classical nonadiabatic molecular dynamics. One finds that even in defect-free crystals the charge carrier can either localize on a single molecule or substantially delocalize over a large number of molecules depending on the relative strength of electronic couplings between the molecules, reorganization, or charge trapping energy of the molecule and thermal fluctuations of electronic couplings and site energies, also known as electron-phonon couplings.Our simulations predict that in molecular OSs exhibiting some of the highest measured charge mobilities to date, the charge carrier forms "flickering" polarons, objects that are delocalized over 10-20 molecules on average and that constantly change their shape and extension under the influence of thermal disorder. The flickering polarons propagate through the OS by short (≈10 fs long) bursts of the wave function that lead to an expansion of the polaron to about twice its size, resulting in spatial displacement, carrier diffusion, charge mobility, and electrical conductivity. Arguably best termed "transient delocalization", this mechanistic scenario is very similar to the one assumed in transient localization theory and supports its assertions. We also review recent applications of our methodology to charge transport in disordered and nanocrystalline samples, which allows us to understand the influence of defects and grain boundaries on the charge propagation.Unfortunately, the energetically favorable packing structures of typical OSs, whether molecular or polymeric, places fundamental constraints on charge mobilities/electronic conductivity compared to inorganic semiconductors, which limits their range of applications. In this Account, we review the design rules that could pave the way for new very high-mobility OS materials and we argue that 2D covalent organic frameworks are one of the most promising candidates to satisfy them.We conclude that our nonadiabatic dynamics method is a powerful approach for predicting charge carrier transport in crystalline and disordered materials. We close with a brief outlook on extensions of the method to exciton transport, dissociation, and recombination. This will bring us a step closer to an understanding of the birth, survival, and annihiliation of charges at interfaces of optoelectronic devices.

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/adf9/8928466/228e0f2cd720/ar1c00675_0010.jpg
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摘要

有机半导体(OSs)是一类令人兴奋的材料,它们在本世纪实现了包括大面积电子、柔性显示器和廉价太阳能电池在内的颠覆性技术。所有这些技术都依赖于材料内部电荷的运动,而这些电荷的扩散性对其性能至关重要。在这方面,令人惊讶的是,这些材料中的电荷输运性质多年来一直困扰着科学界,即使对于像分子单晶这样显然简单的系统也是如此:一些实验更适合用局部粒子图像来解释,类似于分子或生物电子转移,而另一些则更符合波状解释,更类似于金属中的能带输运。OSs 中电荷载流子输运的理论和模拟方面的令人兴奋的最新进展,现在已经导致对这些不同发现的统一理解,本账户将详细回顾我们实验室开发的其中一种工具:通过量子经典非绝热分子动力学进行直接电荷载流子传播。人们发现,即使在没有缺陷的晶体中,电荷载流子也可以在单个分子上局部化,或者在大量分子上实质上离域化,这取决于分子之间的电子耦合、重组或电荷俘获能以及电子耦合和位能的热涨落的相对强度,也称为电子-声子耦合。我们的模拟预测,在表现出迄今为止测量到的最高电荷迁移率的某些分子 OSs 中,电荷载流子形成“闪烁”极化子,这些极化子在平均 10-20 个分子上离域,并在热无序的影响下不断改变其形状和扩展。闪烁极化子通过波函数的短(≈10 fs 长)爆发在 OS 中传播,导致极化子扩展到其大小的两倍左右,从而导致空间位移、载流子扩散、电荷迁移率和电导率。可以说最好称为“瞬态离域化”,这种机械情景与瞬态局域化理论所假设的情景非常相似,并支持其断言。我们还回顾了我们的方法在无序和纳米晶样品中电荷输运的最新应用,这使我们能够了解缺陷和晶界对电荷输运的影响。不幸的是,与无机半导体相比,典型 OSs(无论是分子还是聚合物)的能量有利的堆积结构对电荷迁移率/电子电导率施加了基本限制,这限制了它们的应用范围。在本账户中,我们回顾了可能为新型超高迁移率 OS 材料铺平道路的设计规则,并认为二维共价有机骨架是满足这些规则的最有希望的候选材料之一。我们的结论是,我们的非绝热动力学方法是预测结晶和非晶材料中电荷载流子输运的有力方法。我们以对激子输运、离解和复合的方法扩展的简要展望结束。这将使我们更接近于理解光电设备界面处电荷的产生、存活和湮灭。

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