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高压合成与FeSeTe超导性能的增强

High-Pressure Synthesis and the Enhancement of the Superconducting Properties of FeSeTe.

作者信息

Azam Mohammad, Manasa Manasa, Zajarniuk Tatiana, Diduszko Ryszard, Cetner Tomasz, Morawski Andrzej, Więckowski Jarosław, Wiśniewski Andrzej, Singh Shiv J

机构信息

Institute of High Pressure Physics (IHPP), Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland.

Institute of Physics, Polish Academy of Sciences, Aleja Lotników 32/46, 02-668 Warsaw, Poland.

出版信息

Materials (Basel). 2023 Jul 30;16(15):5358. doi: 10.3390/ma16155358.

Abstract

A series of FeSeTe bulk samples have been prepared using the high gas pressure and high-temperature synthesis (HP-HTS) method to optimize the growth conditions for the first time and investigated for their superconducting properties using structural, microstructure, transport, and magnetic measurements to reach the final conclusions. Ex situ and in situ processes are used to prepare bulk samples under a range of growth pressures using Ta-tube and without Ta-tube. The parent compound synthesized by convenient synthesis method at ambient pressure (CSP) exhibits a superconducting transition temperature of 14.8 K. Our data demonstrate that the prepared FeSeTe sealed in a Ta-tube is of better quality than the samples without a Ta-tube, and the optimum growth conditions (500 MPa, 600 °C for 1 h) are favorable for the development of the tetragonal FeSeTe phase. The optimum bulk FeSeTe depicts a higher transition temperature of 17.3 K and a high critical current density of the order of >10 A/cm at 0 T, which is improved over the entire magnetic field range and almost twice higher than the parent compound prepared using CSP. Our studies confirm that the high-pressure synthesis method is a highly efficient way to improve the superconducting transition, grain connectivity, sample density, and pinning properties of a superconductor.

摘要

首次采用高气压高温合成(HP-HTS)方法制备了一系列FeSeTe块状样品,以优化其生长条件,并通过结构、微观结构、输运和磁性测量对其超导性能进行了研究,从而得出最终结论。采用异位和原位工艺,在一系列生长压力下,使用钽管和不使用钽管制备块状样品。通过常压下的便捷合成方法(CSP)合成的母体化合物的超导转变温度为14.8K。我们的数据表明,密封在钽管中的制备的FeSeTe质量优于无钽管的样品,最佳生长条件(500MPa,600℃,1小时)有利于四方FeSeTe相的形成。最佳块状FeSeTe的转变温度更高,为17.3K,在0T时的临界电流密度高达>10A/cm,在整个磁场范围内都有所提高,几乎是使用CSP制备的母体化合物的两倍。我们的研究证实,高压合成方法是提高超导体超导转变、晶粒连通性、样品密度和钉扎性能的高效方法。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d185/10419941/c3098fd4413e/materials-16-05358-g001.jpg

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