碲和铁掺杂对FeSeTe薄膜超导性能的影响。

Effects of Te- and Fe-doping on the superconducting properties in FeSeTe thin films.

作者信息

Zhang Yalin, Wang Tong, Wang Zhihe, Xing Zhongwen

机构信息

National Laboratory of Solid State Microstructures and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.

College of Engineering and Applied Sciences, Nanjing University, Nanjing, 210093, China.

出版信息

Sci Rep. 2022 Jan 10;12(1):391. doi: 10.1038/s41598-021-04403-4.

DOI:10.1038/s41598-021-04403-4

PMID:35013483

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8748920/

Abstract

High quality FeSeTe epitaxial thin films have been fabricated on TiO-buffered SrTiO substrates by pulsed laser deposition technology. There is a significant composition deviation between the nominal target and the thin film. Te doping can affect the Se/Te ratio and Fe content in chemical composition. The superconducting transition temperature T is closely related to the chemical composition. Fe vacancies are beneficial for the FeSeTe films to exhibit the higher T. A 3D phase diagram is given that the optimize range is x = 0.13-0.15 and y = 0.73-0.78 for FeSeTe films. The anisotropic, effective pining energy, and critical current density for the FeSeTe, FeSeTe and FeSeTe films were studied in detail. The scanning transmission electron microscopy images display a regular atomic arrangement at the interfacial structure.

摘要

通过脉冲激光沉积技术在TiO缓冲的SrTiO衬底上制备了高质量的FeSeTe外延薄膜。名义靶材与薄膜之间存在显著的成分偏差。Te掺杂会影响化学成分中的Se/Te比和Fe含量。超导转变温度T与化学成分密切相关。Fe空位有利于FeSeTe薄膜表现出更高的T。给出了一个三维相图，表明FeSeTe薄膜的优化范围是x = 0.13 - 0.15和y = 0.73 - 0.78。详细研究了FeSeTe、FeSeTe和FeSeTe薄膜的各向异性、有效钉扎能和临界电流密度。扫描透射电子显微镜图像显示界面结构处原子排列规则。