Suppr超能文献

用于芯片晶圆化学机械抛光(CMP)过程以改善缺陷和提高抛光去除率响应的聚合物纳米颗粒

Polymer Nanoparticles Applied in the CMP (Chemical Mechanical Polishing) Process of Chip Wafers for Defect Improvement and Polishing Removal Rate Response.

作者信息

Chiu Wei-Lan, Huang Ching-I

机构信息

Institute of Polymer Science and Engineering, National Taiwan University, Taipei 10617, Taiwan.

出版信息

Polymers (Basel). 2023 Jul 27;15(15):3198. doi: 10.3390/polym15153198.

Abstract

Chemical mechanical planarization (CMP) is a wafer-surface-polishing planarization technique based on a wet procedure that combines chemical and mechanical forces to fully flatten materials for semiconductors to be mounted on the wafer surface. The achievement of devices of a small nano-size with few defects and good wafer yields is essential in enabling IC chip manufacturers to enhance their profits and become more competitive. The CMP process is applied to produce many IC generations of nanometer node, or those of even narrower line widths, for a better performance and manufacturing feasibility. Slurry is a necessary supply for CMP. The most critical component in slurry is an abrasive particle which affects the removal rates, uniformity, defects, and removal selectivity for the materials on the wafer surface. The polishing abrasive is the source of mechanical force. Conventional CMP abrasives consist of colloidal silica, fume silica or other inorganic polishing particles in the slurries. We were the first to systematically study nanoparticles of the polymer type applied in CMP, and to compare traditional inorganic and polymer nanoparticles in terms of polishing performance. In particular, the polymer nanoparticle size, shape, solid content dosing ratio, and molecular types were examined. The polishing performance was measured for the polishing removal rates, total defect counts, and uniformity. We found that the polymer nanoparticles significantly improved the total defect counts and uniformity, although the removal rates were lower than the rates obtained using inorganic nanoparticles. However, the lower removal rates of the polymer nanoparticles are acceptable due to the thinner film materials used for smaller IC device nodes, which may be below 10 nm. We also found that the physical properties of polymer nanoparticles, in terms of their size, shape, and different types of copolymer molecules, cause differences in the polishing performance. Meanwhile, we used statistical analysis software to analyze the data on the polishing removal rates and defect counts. This method helps to determine the most suitable polymer nanoparticle for use as a slurry abrasive, and improves the reliability trends for defect counts.

摘要

化学机械平面化(CMP)是一种基于湿法工艺的晶圆表面抛光平面化技术,该工艺结合了化学和机械力,以完全平整材料,以便将半导体安装在晶圆表面。制造出具有少量缺陷和良好晶圆良率的小纳米尺寸器件,对于集成电路芯片制造商提高利润和增强竞争力至关重要。CMP工艺被应用于生产许多代纳米节点的集成电路,甚至是线宽更窄的集成电路,以实现更好的性能和制造可行性。浆料是CMP的必要供应品。浆料中最关键的成分是磨料颗粒,它会影响晶圆表面材料的去除速率、均匀性、缺陷和去除选择性。抛光磨料是机械力的来源。传统的CMP磨料由浆料中的胶体二氧化硅、气相二氧化硅或其他无机抛光颗粒组成。我们是第一个系统研究应用于CMP的聚合物型纳米颗粒,并在抛光性能方面比较传统无机和聚合物纳米颗粒的。特别是,研究了聚合物纳米颗粒的尺寸、形状、固含量配比和分子类型。通过测量抛光去除速率、总缺陷数和均匀性来评估抛光性能。我们发现,尽管聚合物纳米颗粒的去除速率低于使用无机纳米颗粒时的速率,但它们显著改善了总缺陷数和均匀性。然而,由于用于更小集成电路器件节点的薄膜材料可能低于10纳米,聚合物纳米颗粒较低的去除速率是可以接受的。我们还发现,聚合物纳米颗粒的物理性质,包括其尺寸、形状和不同类型的共聚物分子,会导致抛光性能的差异。同时,我们使用统计分析软件来分析抛光去除速率和缺陷数的数据。这种方法有助于确定最适合用作浆料磨料的聚合物纳米颗粒,并改善缺陷数的可靠性趋势。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/865b/10421431/7b6f214b42c2/polymers-15-03198-g001.jpg

文献AI研究员

20分钟写一篇综述,助力文献阅读效率提升50倍。

立即体验

用中文搜PubMed

大模型驱动的PubMed中文搜索引擎

马上搜索

文档翻译

学术文献翻译模型,支持多种主流文档格式。

立即体验