具有27 dB内部净增益的铒镱共掺杂薄膜铌酸锂集成波导放大器。

Erbium-ytterbium codoped thin-film lithium niobate integrated waveguide amplifier with a 27 dB internal net gain.

作者信息

Zhang Zhihao, Li Shanming, Gao Renhong, Zhang Haisu, Lin Jintian, Fang Zhiwei, Wu Rongbo, Wang Min, Wang Zhenhua, Hang Yin, Cheng Ya

出版信息

Opt Lett. 2023 Aug 15;48(16):4344-4347. doi: 10.1364/OL.497543.

DOI:10.1364/OL.497543

PMID:37582028

Abstract

A photonic integrated waveguide amplifier fabricated on erbium-ytterbium (Er-Yb) codoped thin-film lithium niobate (TFLN) has been investigated in this work. A small-signal internal net gain of 27 dB is achieved at a signal wavelength of 1532 nm in the fabricated Er-Yb TFLN waveguide amplifier pumped by a diode laser at ≈980 nm. Experimental characterizations reveal the suitability of waveguide fabrication by the photolithography-assisted chemo-mechanical etching (PLACE) technique and also the gain in an Yb-sensitized-Er material. The demonstrated high-gain chip-scale TFLN amplifier is promising for interfacing with established lithium niobate integrated devices, greatly extending the spectrum of TFLN photonic applications.

摘要

在这项工作中，对一种在铒镱（Er-Yb）共掺杂的薄膜铌酸锂（TFLN）上制造的光子集成波导放大器进行了研究。在由波长约为980 nm的二极管激光器泵浦的已制造的Er-Yb TFLN波导放大器中，在信号波长为1532 nm时实现了27 dB的小信号内部净增益。实验表征揭示了通过光刻辅助化学机械蚀刻（PLACE）技术制造波导的适用性，以及Yb敏化Er材料中的增益。所展示的高增益芯片级TFLN放大器有望与成熟的铌酸锂集成器件相连接，极大地扩展TFLN光子应用的范围。