Zhang Zhihao, Li Shanming, Gao Renhong, Zhang Haisu, Lin Jintian, Fang Zhiwei, Wu Rongbo, Wang Min, Wang Zhenhua, Hang Yin, Cheng Ya
Opt Lett. 2023 Aug 15;48(16):4344-4347. doi: 10.1364/OL.497543.
A photonic integrated waveguide amplifier fabricated on erbium-ytterbium (Er-Yb) codoped thin-film lithium niobate (TFLN) has been investigated in this work. A small-signal internal net gain of 27 dB is achieved at a signal wavelength of 1532 nm in the fabricated Er-Yb TFLN waveguide amplifier pumped by a diode laser at ≈980 nm. Experimental characterizations reveal the suitability of waveguide fabrication by the photolithography-assisted chemo-mechanical etching (PLACE) technique and also the gain in an Yb-sensitized-Er material. The demonstrated high-gain chip-scale TFLN amplifier is promising for interfacing with established lithium niobate integrated devices, greatly extending the spectrum of TFLN photonic applications.
在这项工作中，对一种在铒镱（Er-Yb）共掺杂的薄膜铌酸锂（TFLN）上制造的光子集成波导放大器进行了研究。在由波长约为980 nm的二极管激光器泵浦的已制造的Er-Yb TFLN波导放大器中，在信号波长为1532 nm时实现了27 dB的小信号内部净增益。实验表征揭示了通过光刻辅助化学机械蚀刻（PLACE）技术制造波导的适用性，以及Yb敏化Er材料中的增益。所展示的高增益芯片级TFLN放大器有望与成熟的铌酸锂集成器件相连接，极大地扩展TFLN光子应用的范围。
