Fang Shaobo, Hong Bingzhou, Lv Liming, Shen Ruoyu, Zhao Haibin, Chu Wei, Cai Haiwen, Huang Weiping
Opt Lett. 2024 Oct 1;49(19):5519-5522. doi: 10.1364/OL.530942.
Thin-film lithium niobate (TFLN) based integrated photonic devices have been intensively investigated due to their promising properties, enabling various on-chip applications. Grating couplers (GCs) are wildly used for their flexibility and high alignment tolerance for fiber-to-chip coupling. However, achieving high coupling efficiency (CE) in TFLN GCs often requires the use of reflectors, hybrid materials, or extremely narrow linewidths of the grating arrays, which significantly increases the fabrication difficulty. Therefore, there is a demand for high-CE GCs on TFLN with simple structure and easy fabrication processes. In this paper, combining process capabilities, we demonstrate a highly efficient apodized GC by linearly optimizing the period length and the fill factor on a 600-nm-thick TFLN platform. Without any reflector or hybrid material, we achieve a remarkable coupling loss of -2.97 dB at 1555 nm on the 600-nm-thick X-cut TFLN platform with only a single lithography and etching step. Our work sets a new benchmark for CE among GCs on the 600-nm-thick TFLN platform.
基于薄膜铌酸锂(TFLN)的集成光子器件因其具有良好的性能而受到广泛研究,可实现各种片上应用。光栅耦合器(GCs)因其灵活性和对光纤到芯片耦合的高对准容差而被广泛使用。然而,在TFLN光栅耦合器中实现高耦合效率(CE)通常需要使用反射器、混合材料或光栅阵列的极窄线宽,这显著增加了制造难度。因此,需要在TFLN上具有简单结构和易于制造工艺的高CE光栅耦合器。在本文中,结合工艺能力,我们通过在600纳米厚的TFLN平台上线性优化周期长度和填充因子,展示了一种高效的变迹光栅耦合器。在没有任何反射器或混合材料的情况下,我们在600纳米厚的X切TFLN平台上仅通过一次光刻和蚀刻步骤,在1555纳米处实现了-2.97 dB的显著耦合损耗。我们的工作为600纳米厚TFLN平台上的光栅耦合器的耦合效率设定了新的基准。