Zheng Xin Yu, Channa Sanyum, Riddiford Lauren J, Wisser Jacob J, Mahalingam Krishnamurthy, Bowers Cynthia T, McConney Michael E, N'Diaye Alpha T, Vailionis Arturas, Cogulu Egecan, Ren Haowen, Galazka Zbigniew, Kent Andrew D, Suzuki Yuri
Department of Applied Physics, Stanford University, Stanford, CA, 94305, USA.
Geballe Laboratory for Advanced Materials, Stanford University, Stanford, CA, 94305, USA.
Nat Commun. 2023 Aug 15;14(1):4918. doi: 10.1038/s41467-023-40733-9.
Ultra-thin films of low damping ferromagnetic insulators with perpendicular magnetic anisotropy have been identified as critical to advancing spin-based electronics by significantly reducing the threshold for current-induced magnetization switching while enabling new types of hybrid structures or devices. Here, we have developed a new class of ultra-thin spinel structure LiAlFeO (LAFO) films on MgGaO (MGO) substrates with: 1) perpendicular magnetic anisotropy; 2) low magnetic damping and 3) the absence of degraded or magnetic dead layers. These films have been integrated with epitaxial Pt spin source layers to demonstrate record low magnetization switching currents and high spin-orbit torque efficiencies. These LAFO films on MGO thus combine all of the desirable properties of ferromagnetic insulators with perpendicular magnetic anisotropy, opening new possibilities for spin based electronics.
具有垂直磁各向异性的低阻尼铁磁绝缘体超薄膜,已被视为对推进自旋电子学至关重要,因为它能显著降低电流诱导磁化翻转的阈值,同时实现新型混合结构或器件。在此,我们在MgGaO(MGO)衬底上开发了一类新型的超薄尖晶石结构LiAlFeO(LAFO)薄膜,其具有:1)垂直磁各向异性;2)低磁阻尼;3)不存在退化层或磁性死层。这些薄膜已与外延Pt自旋源层集成,以展示创纪录的低磁化翻转电流和高自旋轨道转矩效率。因此,这些在MGO上的LAFO薄膜兼具了具有垂直磁各向异性的铁磁绝缘体的所有理想特性,为自旋电子学开辟了新的可能性。