Ghosh Susanta, Low Achintya, Ghorai Soumya, Mandal Kalyan, Thirupathaiah Setti
Department of Condensed Matter and Materials Physics, S. N. Bose National Centre for Basic Sciences, Kolkata, West Bengal 700106, India.
J Phys Condens Matter. 2023 Sep 5;35(48). doi: 10.1088/1361-648X/acf262.
We report on the tuning of electrical, magnetic, and topological properties of the magnetic Weyl semimetal (Mn3+xGe) by Fe doping at the Mn site, Mn(3+x)-δFeδGe (= 0, 0.30, and 0.62). Fe doping significantly changes the electrical and magnetic properties of Mn3+xGe. The resistivity of the parent compound displays metallic behavior, the system with= 0.30 of Fe doping exhibits semiconducting or bad-metallic behavior, and the system with= 0.62 of Fe doping demonstrates a metal-insulator transition at around 100 K. Further, we observe that the Fe doping increases in-plane ferromagnetism, magnetocrystalline anisotropy, and induces a spin-glass state at low temperatures. Surprisingly, topological Hall state has been noticed at a Fe doping of= 0.30 that is not found in the parent compound or with= 0.62 of Fe doping. In addition, spontaneous anomalous Hall effect observed in the parent system is significantly reduced with increasing Fe doping concentration.
我们报道了通过在锰位点进行铁掺杂(Mn(3 + x)-δFeδGe,其中δ = 0、0.30和0.62)来调节磁性外尔半金属(Mn3 + xGe)的电学、磁学和拓扑性质。铁掺杂显著改变了Mn3 + xGe的电学和磁学性质。母体化合物的电阻率表现出金属行为,铁掺杂量为0.30的体系呈现半导体或不良金属行为,而铁掺杂量为0.62的体系在约100 K时表现出金属 - 绝缘体转变。此外,我们观察到铁掺杂增强了面内铁磁性、磁晶各向异性,并在低温下诱导出自旋玻璃态。令人惊讶的是,在铁掺杂量为0.30时发现了拓扑霍尔态,而在母体化合物或铁掺杂量为0.62时未发现。此外,随着铁掺杂浓度的增加,母体体系中观察到的自发反常霍尔效应显著降低。