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通过铁掺杂调节磁性外尔半金属Mn₃₊ₓGe的电学、磁学和拓扑性质

Tuning of electrical, magnetic, and topological properties of magnetic Weyl semimetal Mn3+xGe by Fe doping.

作者信息

Ghosh Susanta, Low Achintya, Ghorai Soumya, Mandal Kalyan, Thirupathaiah Setti

机构信息

Department of Condensed Matter and Materials Physics, S. N. Bose National Centre for Basic Sciences, Kolkata, West Bengal 700106, India.

出版信息

J Phys Condens Matter. 2023 Sep 5;35(48). doi: 10.1088/1361-648X/acf262.

Abstract

We report on the tuning of electrical, magnetic, and topological properties of the magnetic Weyl semimetal (Mn3+xGe) by Fe doping at the Mn site, Mn(3+x)-δFeδGe (= 0, 0.30, and 0.62). Fe doping significantly changes the electrical and magnetic properties of Mn3+xGe. The resistivity of the parent compound displays metallic behavior, the system with= 0.30 of Fe doping exhibits semiconducting or bad-metallic behavior, and the system with= 0.62 of Fe doping demonstrates a metal-insulator transition at around 100 K. Further, we observe that the Fe doping increases in-plane ferromagnetism, magnetocrystalline anisotropy, and induces a spin-glass state at low temperatures. Surprisingly, topological Hall state has been noticed at a Fe doping of= 0.30 that is not found in the parent compound or with= 0.62 of Fe doping. In addition, spontaneous anomalous Hall effect observed in the parent system is significantly reduced with increasing Fe doping concentration.

摘要

我们报道了通过在锰位点进行铁掺杂(Mn(3 + x)-δFeδGe,其中δ = 0、0.30和0.62)来调节磁性外尔半金属(Mn3 + xGe)的电学、磁学和拓扑性质。铁掺杂显著改变了Mn3 + xGe的电学和磁学性质。母体化合物的电阻率表现出金属行为,铁掺杂量为0.30的体系呈现半导体或不良金属行为,而铁掺杂量为0.62的体系在约100 K时表现出金属 - 绝缘体转变。此外,我们观察到铁掺杂增强了面内铁磁性、磁晶各向异性,并在低温下诱导出自旋玻璃态。令人惊讶的是,在铁掺杂量为0.30时发现了拓扑霍尔态,而在母体化合物或铁掺杂量为0.62时未发现。此外,随着铁掺杂浓度的增加,母体体系中观察到的自发反常霍尔效应显著降低。

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