Shmidt Natalia M, Shabunina Evgeniya I, Gushchina Ekaterina V, Petrov Vasiliy N, Eliseyev Ilya A, Lebedev Sergey P, Priobrazhenskii Sergei Iu, Tanklevskaya Elena M, Puzyk Mikhail V, Roenkov Alexander D, Usikov Alexander S, Lebedev Alexander A
Ioffe Institute, 26 Politekhnicheskaya, 194021 St. Petersburg, Russia.
Faculty of Chemistry, Herzen State Pedagogical University of Russia, 191186 St. Petersburg, Russia.
Materials (Basel). 2023 Aug 15;16(16):5628. doi: 10.3390/ma16165628.
The quality of graphene intended for use in biosensors was assessed on manufactured chips using a set of methods including atomic force microscopy (AFM), Raman spectroscopy, and low-frequency noise investigation. It is shown that local areas of residues on the graphene surface, formed as a result of the interaction of graphene with a photoresist at the initial stage of chip development, led to a spread of chip resistance (R) in the range of 1-10 kOhm and to an increase in the root mean square (RMS) roughness up to 10 times, which can significantly worsen the reproducibility of the parameters of graphene chips for biosensor applications. It was observed that the control of the photoresist residues after photolithography (PLG) using AFM and subsequent additional cleaning reduced the spread of R values in chips to 1-1.6 kOhm and obtained an RMS roughness similar to the roughness in the graphene film before PLG. Monitoring of the spectral density of low-frequency voltage fluctuation (S), which provides integral information about the system of defects and quality of the material, makes it possible to identify chips with low graphene quality and with inhomogeneously distributed areas of compressive stresses by the type of frequency dependence S(f).
使用包括原子力显微镜(AFM)、拉曼光谱和低频噪声研究在内的一组方法,在制造的芯片上评估了用于生物传感器的石墨烯质量。结果表明,在芯片开发初期,石墨烯与光刻胶相互作用形成的石墨烯表面局部残留区域,导致芯片电阻(R)在1 - 10 kΩ范围内分散,均方根(RMS)粗糙度增加高达10倍,这可能会显著降低用于生物传感器应用的石墨烯芯片参数的再现性。观察到,使用AFM对光刻(PLG)后的光刻胶残留进行控制并随后进行额外清洗,可将芯片中R值的分散降低至1 - 1.6 kΩ,并获得与PLG前石墨烯薄膜粗糙度相似的RMS粗糙度。监测低频电压波动的频谱密度(S),它提供了有关缺陷系统和材料质量的综合信息,通过频率依赖性S(f)的类型,可以识别石墨烯质量低且存在压缩应力分布不均匀区域的芯片。