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基于第一性原理对LuMSb(M = Ni、Pd、Pt)半赫斯勒化合物的电子结构、声子谱和热电性能进行全面研究。

Comprehensive investigation of electronic structure, phonon spectrum and thermoelectric performance of LuMSb (M = Ni, Pd, Pt) half Heusler compounds from first principles.

作者信息

Satyam Jagdish Kumar, Saini Sapan Mohan

机构信息

Department of Physics, National Institute of Technology Raipur, Raipur, India.

出版信息

J Comput Chem. 2024 Jan 5;45(1):25-34. doi: 10.1002/jcc.27216. Epub 2023 Aug 28.

DOI:10.1002/jcc.27216
PMID:37638645
Abstract

We studied the structural, electronic, phonon spectrum and thermoelectric properties of ternary LuMSb (M = Ni, Pd, Pt) half Heusler compounds by using first principles method. The electronic properties are calculated via energy band structure and density of states by using GGA + U approximation. The calculations reveal that the replacement of Ni with Pd and Pt, energy gap decreases and LuNiSb, LuPdSb are found to have narrow indirect band gaps and exhibit semiconducting nature, while LuPtSb is found to be a gapless semiconductor. Phonon band structure calculations give only positive values of phonon frequency indicating the dynamically stability of these compounds. The thermoelectric properties have been computed using semi-classical Boltzmann transport theory. We found high Seebeck coefficient (S) and high power factor (PF) for LuNiSb and LuPdSb compounds in the whole temperature range. The ZT values of LuNiSb and LuPdSb are high in general and reach a maximum of 0.67 and 0.69 at 450 K, respectively, whereas 0.39 is the maximum ZT value for LuPtSb at the same temperature. These findings propose LuNiSb and LuPdSb compounds as promising materials for thermoelectric applications at room temperature.

摘要

我们采用第一性原理方法研究了三元LuMSb(M = Ni、Pd、Pt)半赫斯勒化合物的结构、电子、声子谱和热电性能。通过使用GGA + U近似,经由能带结构和态密度计算电子性质。计算结果表明,用Pd和Pt取代Ni时,能隙减小,发现LuNiSb、LuPdSb具有窄的间接带隙并表现出半导体性质,而LuPtSb是无隙半导体。声子能带结构计算给出的声子频率仅为正值,表明这些化合物的动力学稳定性。使用半经典玻尔兹曼输运理论计算了热电性能。我们发现LuNiSb和LuPdSb化合物在整个温度范围内具有高塞贝克系数(S)和高功率因子(PF)。LuNiSb和LuPdSb的ZT值总体较高,分别在450 K时达到最大值0.67和0.69,而LuPtSb在相同温度下的最大ZT值为0.39。这些发现表明LuNiSb和LuPdSb化合物是室温热电应用中有前景的材料。

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