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FeVSb半赫斯勒合金的第一性原理电子结构、声子特性、晶格热导率及品质因数预测

First-principles electronic structure, phonon properties, lattice thermal conductivity and prediction of figure of merit of FeVSb half-Heusler.

作者信息

Shastri Shivprasad S, Pandey Sudhir K

机构信息

School of Engineering, Indian Institute of Technology Mandi, Kamand 175075, India.

出版信息

J Phys Condens Matter. 2020 Feb 24;33(8):085704. doi: 10.1088/1361-648X/abcc0f.

DOI:10.1088/1361-648X/abcc0f
PMID:33212432
Abstract

In this work, we have studied the electronic structure of a promising thermoelectric half-Heusler FeVSb using FP-LAPW method and SCAN meta-GGA including spin-orbit coupling. Using the obtained electronic structure and transport calculations we try to address the experimental Seebeck coefficient S of FeVSb samples. The good agreement between the experimental and calculated S suggests the band gap could be ∼0.7 eV. This is supported by the obtained mBJ band gap of ∼0.7 eV. Further, we study and report the phonon dispersion, density of states and thermodynamic properties. The effect of long range Coulomb interactions on phonon frequencies are also included by nonanalytical term correction. Under quasi-harmonic approximation, the thermal expansion behaviour up to 1200 K is calculated. Using the first-principles anharmonic phonon calculations, the lattice thermal conductivity κ of FeVSb is obtained under single-mode relaxation time approximation considering the phonon-phonon interaction. At 300 K, the calculated κ is ∼18.6 W m K which is higher compared to experimental value. But, above 500 K the calculated κ is in good agreement with experiment. A prediction of figure of merit ZT and efficiency for p-type and n-type FeVSb is made by finding out optimal carrier concentration. At 1200 K, a maximum ZT of ∼0.66 and ∼0.44 is expected for p-type and n-type FeVSb, respectively. For p-type and n-type materials, maximum efficiency of ∼12.2% and ∼6.0% are estimated for hot and cold temperature of 1200 K and 300 K, respectively. A possibility of achieving n-type and p-type FeVSb by elemental doping/vacancy is also discussed. Our study is expected to help in further exploring the thermoelectric material FeVSb.

摘要

在这项工作中,我们使用全势线性缀加平面波(FP-LAPW)方法和包含自旋轨道耦合的SCAN元广义梯度近似(meta-GGA)研究了一种很有前景的热电半赫斯勒合金FeVSb的电子结构。利用所获得的电子结构和输运计算结果,我们试图解释FeVSb样品的实验塞贝克系数S。实验值与计算值S之间的良好一致性表明带隙可能约为0.7电子伏特。这得到了所获得的约0.7电子伏特的改进型贝克乔普(mBJ)带隙的支持。此外,我们研究并报告了声子色散、态密度和热力学性质。非解析项修正还考虑了长程库仑相互作用对声子频率的影响。在准谐近似下,计算了高达1200K的热膨胀行为。使用第一性原理非谐声子计算,在考虑声子-声子相互作用的单模弛豫时间近似下获得了FeVSb的晶格热导率κ。在300K时,计算得到的κ约为18.6W/(m·K),与实验值相比更高。但是,在500K以上,计算得到的κ与实验结果吻合良好。通过找出最佳载流子浓度,对p型和n型FeVSb的优值ZT和效率进行了预测。在1200K时,预计p型和n型FeVSb的最大ZT分别约为0.66和0.44。对于p型和n型材料,在热端温度为1200K和冷端温度为300K时,估计最大效率分别约为12.2%和6.0%。还讨论了通过元素掺杂/空位实现n型和p型FeVSb的可能性。我们的研究有望有助于进一步探索热电材料FeVSb。

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