Shi Shucheng, Han Yong, Yang Tian, Zang Yijing, Zhang Hui, Li Yimin, Liu Zhi
School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China.
Center for Transformative Science, ShanghaiTech University, Shanghai, 201210, China.
Chemphyschem. 2023 Nov 16;24(22):e202300543. doi: 10.1002/cphc.202300543. Epub 2023 Sep 21.
The surface structure effect on the oxidation of Cu has been investigated by performing ambient-pressure X-ray photoelectron spectroscopy (APXPS) on Cu(111) and Cu(110) surfaces under oxygen pressures ranging from 10 to 1 mbar and temperatures from 300 to 750 K. The APXPS results show a subsequential phase transition from chemisorbed O/Cu overlayer to Cu O and then to CuO on both surfaces. For a given temperature, the oxygen pressure needed to induce initial formation of Cu O on Cu(110) is about two orders of magnitude greater than that on Cu(111), which is in contrast with the facile formation of O/Cu overlayer on clean Cu(110). The depth profile measurements during the initial stage of Cu O formation indicate the distinct growth modes of Cu O on the two surface orientations. We attribute these prominent effects of surface structure to the disparities in the kinetic processes, such as the dissociation and surface/bulk diffusion over O/Cu overlayers. Our findings provide new insights into the kinetics-controlled process of Cu oxidation by oxygen.
通过在10至1毫巴的氧气压力和300至750 K的温度下,对Cu(111)和Cu(110)表面进行常压X射线光电子能谱(APXPS),研究了表面结构对Cu氧化的影响。APXPS结果表明,在两个表面上都发生了从化学吸附的O/Cu覆盖层到Cu₂O再到CuO的连续相变。对于给定温度,在Cu(110)上诱导Cu₂O初始形成所需的氧气压力比在Cu(111)上大两个数量级左右,这与在清洁的Cu(110)上容易形成O/Cu覆盖层形成对比。在Cu₂O形成初期的深度剖面测量表明,Cu₂O在两种表面取向的生长模式不同。我们将这些显著的表面结构效应归因于动力学过程的差异,例如O/Cu覆盖层上的解离和表面/体扩散。我们的发现为氧气氧化Cu的动力学控制过程提供了新的见解。