Zhang Guowu, Mojaver Hassan Rahbardar, Das Alok, Liboiron-Ladouceur Odile
Opt Lett. 2020 Feb 15;45(4):811-814. doi: 10.1364/OL.384771.
A mode insensitive switch is proposed and experimentally demonstrated on a silicon-on-insulator platform using a balanced Mach-Zehnder interferometer structure with a mode insensitive phase shifter for on-chip mode division multiplexing interconnects. Switching the first three quasi-transverse electric (TE) modes, consuming less than 40 mW power is demonstrated. The whole system exhibits approximately $ - {2},;{ - 3.7}$-2,-3.7, and $ - {5.2};{\rm dB}$-5.2dB insertion loss for the TE0, TE1, and TE2 modes at 1550 nm, respectively. The corresponding crosstalk is less than $ - {8.6};({\rm - 9}), {- 8} ({ - 10.3})$-8.6(-9),-8(-10.3), and $ - {10};{\rm dB}$-10dB ($ - {10.3};{\rm dB}$-10.3dB) within the wavelength range of 40 nm (1535-1575 nm) for the cross (bar) states, respectively. The extinction ratios (ERs) for the cross (bar) states are 20.1 (19.5), 22.8 (33.7), and 15.4 dB (18.1 dB) for the TE0, TE1, and TE2 modes at 1550 nm, respectively. The payload transmission is also conducted using non-return-to-zero pseudorandom binary sequence (PRBS)-31 data signals at 10 Gb/s for single-mode transmission and simultaneous three-mode transmissions. For all the scenarios, open eyes are observed.
提出了一种模式不敏感开关,并在绝缘体上硅平台上通过实验进行了演示,该开关采用平衡马赫曾德尔干涉仪结构和用于片上模式分割复用互连的模式不敏感移相器。演示了切换前三个准横向电(TE)模式,功耗低于40 mW。整个系统在1550 nm波长下,TE0、TE1和TE2模式的插入损耗分别约为-2、-3.7和-5.2 dB。在40 nm(1535 - 1575 nm)波长范围内,交叉(条形)状态的相应串扰分别小于-8.6(-9)、-8(-10.3)和-10 dB(-10.3 dB)。在1550 nm波长下,TE0、TE1和TE2模式交叉(条形)状态的消光比(ER)分别为20.1(19.5)、22.8(33.7)和15.4 dB(18.1 dB)。还使用10 Gb/s的非归零伪随机二进制序列(PRBS)-31数据信号进行单模传输和同时三模传输的有效载荷传输。在所有情况下,均观察到了清晰的眼图。