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通过铜掺杂剂和氧空位对氧化钴进行阳离子和阴离子缺陷修饰以制备高性能超级电容器

Cationic and anionic defect decoration of CoO through Cu dopants and oxygen vacancy for a High‑Performance supercapacitor.

作者信息

Feng Yamin, Sun Lingling, Qi Zhiwen, Zhang Yan, Wang Gaoliang, Gao Wenning, Liu Weifeng

机构信息

College of physics and telecommunication engineering, Zhoukou Normal University, 466001, Zhoukou, PR China.

College of physics and telecommunication engineering, Zhoukou Normal University, 466001, Zhoukou, PR China.

出版信息

J Colloid Interface Sci. 2023 Dec 15;652(Pt B):1099-1107. doi: 10.1016/j.jcis.2023.08.142. Epub 2023 Aug 23.

Abstract

CoO has attracted increasing attention as an electrochemical energy storage owing to its excellent redox activity and high theoretical specific capacitance. However, its low inherent electrical conductivity results in sluggish reaction kinetics, and the poor rate capability of CoO limits its widespread applications. Herein, a multiple-defect strategy of engineering oxygen vacancies and Cu-ion dopants into the low-crystalline CoO nanowires (Ov-Cu-CoO) is successfully applied. Because of the advantage of the dual defect synergetic effect, the electronic structure and charge distribution are effectively modulated, thus enhancing the electrical conductivity and enriched redox chemistry. The obtained Ov-Cu-CoO electrode exhibits a high specific capacity of 1388.6 F⋅g at a current density of 1 A⋅g, an ultrahigh rate performance (81.2% of the capacitance retained at 20 A⋅g) and excellent cycling stability (101.1% after 10,000 cycles). Moreover, an asymmetric supercapacitor device with Ov-Cu-CoO as the positive electrode having a high energy density of 44.1 W⋅h⋅kg at a power density of 800 W⋅kg, and can still remain 27.2 W⋅h⋅kg at a power density of 16 kW⋅kg. This study demonstrates an effective strategy to enhance electrochemical performance of CoO that can be easy applied to other transition metal oxides.

摘要

由于具有优异的氧化还原活性和较高的理论比电容,氧化钴(CoO)作为一种电化学储能材料受到了越来越多的关注。然而,其固有的低电导率导致反应动力学缓慢,CoO较差的倍率性能限制了其广泛应用。在此,一种在低结晶度CoO纳米线中引入氧空位和铜离子掺杂剂的多重缺陷策略(Ov-Cu-CoO)被成功应用。由于双缺陷协同效应的优势,电子结构和电荷分布得到有效调控,从而提高了电导率并丰富了氧化还原化学性质。所制备的Ov-Cu-CoO电极在1 A⋅g的电流密度下展现出1388.6 F⋅g的高比电容、超高的倍率性能(在20 A⋅g时仍保留81.2%的电容)以及出色的循环稳定性(10000次循环后为101.1%)。此外,以Ov-Cu-CoO作为正极的非对称超级电容器装置在800 W⋅kg的功率密度下具有44.1 W⋅h⋅kg的高能量密度,并且在16 kW⋅kg的功率密度下仍可保持27.2 W⋅h⋅kg。本研究展示了一种增强CoO电化学性能的有效策略,该策略可轻松应用于其他过渡金属氧化物。

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