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n型固溶体BiSbTe(x < 1)的合成及热电性能

The Synthesis and Thermoelectric Properties of the n-Type Solid Solution BiSbTe (x < 1).

作者信息

Galodé Amélie, Barbier Tristan, Gascoin Franck

机构信息

Laboratoire CRISMAT, ENSICAEN, UNICAEN, CNRS Normandie Université (UMR 6508), 14280 Caen, France.

出版信息

Materials (Basel). 2023 Aug 30;16(17):5941. doi: 10.3390/ma16175941.

DOI:10.3390/ma16175941
PMID:37687633
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC10488999/
Abstract

Commercial Peltier cooling devices and thermoelectric generators mostly use bismuth telluride-based materials, specifically its alloys with SbTe for the p-type legs and its alloys with BiSe for the n-type legs. If the p-type materials perform with zT well above the unity around room temperature, the n-type counterpart is lacking efficiency in this temperature range, and has the disadvantage of containing selenium. Indeed, despite the fact that selenium is not environmentally benign and that its handling requires precautions, the use of selenium does not facilitate the optimization of thermoelectric performance at or around room temperature, as the presence of selenium results in a larger band gap. In this study, we investigate the feasibility of a selenium-free n-type (Bi, Sb)Te using a simple two-step process: mechanical alloying synthesis followed by spark plasma sintering. All the members of the solid solution BiSbTe with x < 1 are n-type materials, with zTs between 0.35 and 0.6. The zT is maximized at lower temperatures with an increasing Sb content, which is proof that the band gap is reduced accordingly. We also show here that an edge-free sintering process considerably improves thermoelectric performance.

摘要

商用珀耳帖冷却装置和热电发电机大多使用碲化铋基材料,具体而言,其用于p型支腿的是与SbTe的合金,用于n型支腿的是与BiSe的合金。如果p型材料在室温附近的zT性能远高于1,那么n型材料在该温度范围内效率较低,并且存在含硒的缺点。事实上,尽管硒对环境不利且其处理需要 precautions,但使用硒并不能促进在室温或室温附近的热电性能优化,因为硒的存在会导致更大的带隙。在本研究中,我们使用简单的两步法研究无硒n型(Bi,Sb)Te的可行性:机械合金化合成,然后进行放电等离子烧结。x < 1的固溶体BiSbTe的所有成员都是n型材料,zT在0.35至0.6之间。随着Sb含量的增加,zT在较低温度下达到最大值,这证明带隙相应减小。我们在此还表明,无边缘烧结工艺可显著提高热电性能。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3649/10488999/9502cc791772/materials-16-05941-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3649/10488999/1e816ca75952/materials-16-05941-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3649/10488999/d242a134e59a/materials-16-05941-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3649/10488999/9502cc791772/materials-16-05941-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3649/10488999/1e816ca75952/materials-16-05941-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3649/10488999/d242a134e59a/materials-16-05941-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3649/10488999/9502cc791772/materials-16-05941-g003.jpg

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本文引用的文献

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n-BiSbTe: A Promising Alternative to Mainstream Thermoelectric Material n-BiTeSe near Room Temperature.n-BiSbTe:室温附近有望替代主流热电材料n-BiTeSe的材料。
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Influence of Pd Doping on Electrical and Thermal Properties of -Type CuBiTeSe Alloys.钯掺杂对 n 型 CuBiTeSe 合金电学和热学性能的影响。
Materials (Basel). 2019 Dec 6;12(24):4080. doi: 10.3390/ma12244080.
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