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使用单源前驱体制备非晶硅碳混合薄膜。

Fabrication of Amorphous Silicon-Carbon Hybrid Films Using Single-Source Precursors.

作者信息

Sauermoser Aileen, Lainer Thomas, Knoechl Andreas, Goni Freskida, Fischer Roland C, Fitzek Harald, Dienstleder Martina, Prietl Christine, Kelterer Anne-Marie, Bandl Christine, Jakopic Georg, Kothleitner Gerald, Haas Michael

机构信息

Institute of Inorganic Chemistry, Graz University of Technology; Stremayrgasse 9/V, 8010 Graz, Austria.

Graz Centre for Electron Microscopy (ZFE), Steyrergasse 17, 8010 Graz, Austria.

出版信息

Inorg Chem. 2023 Sep 25;62(38):15490-15501. doi: 10.1021/acs.inorgchem.3c01846. Epub 2023 Sep 12.

DOI:10.1021/acs.inorgchem.3c01846
PMID:37700615
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC10523434/
Abstract

The aim of this study was the preparation of different amorphous silicon-carbon hybrid thin-layer materials according to the liquid phase deposition (LPD) process using single-source precursors. In our study, 2-methyl-2-silyltrisilane (methylisotetrasilane; ), 1,1,1-trimethyl-2,2-disilyltrisilane (trimethylsilylisotetrasilane; ), 2-phenyl-2-silyltrisilane (phenylisotetrasilane; ), and 1,1,2,2,4,4,5,5-octamethyl-3,3,6,6-tetrasilylcyclohexasilane (cyclohexasilane; ) were utilized as precursor materials and compared with the parent compound 2,2-disilyltrisilane (neopentasilane; ). Compounds - were successfully oligomerized at λ = 365 nm with catalytic amounts of the neopentasilane oligomer (). These oligomeric mixtures ( and -) were used for the preparation of thin-layer materials. Optimum solution and spin coating conditions were investigated, and amorphous silicon-carbon films were obtained. All thin-layer materials were characterized via UV/vis spectroscopy, light microscopy, spectroscopic ellipsometry, XPS, SEM, and SEM/EDX. Our results show that the carbon content and especially the bandgap can be easily tuned using these single-source precursors via LPD.

摘要

本研究的目的是使用单源前驱体，根据液相沉积（LPD）工艺制备不同的非晶硅 - 碳杂化薄层材料。在我们的研究中，2 - 甲基 - 2 - 硅基三硅烷（甲基异四硅烷； ）、1,1,1 - 三甲基 - 2,2 - 二硅基三硅烷（三甲基硅基异四硅烷； ）、2 - 苯基 - 2 - 硅基三硅烷（苯基异四硅烷； ）和1,1,2,2,4,4,5,5 - 八甲基 - 3,3,6,6 - 四硅基环己硅烷（环己硅烷； ）被用作前驱体材料，并与母体化合物2,2 - 二硅基三硅烷（新戊硅烷； ）进行比较。化合物 - 在λ = 365 nm下，使用催化量的新戊硅烷低聚物（ ）成功低聚。这些低聚混合物（ 和 - ）用于制备薄层材料。研究了最佳溶液和旋涂条件，并获得了非晶硅 - 碳膜。所有薄层材料均通过紫外/可见光谱、光学显微镜、光谱椭偏仪、X射线光电子能谱、扫描电子显微镜和扫描电子显微镜/能谱仪进行表征。我们的结果表明，通过LPD使用这些单源前驱体可以轻松调节碳含量，尤其是带隙。

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