Lai Benlin, Zhang Yongan, Zhang Changxing
Appl Opt. 2023 May 20;62(15):4040-4046. doi: 10.1364/AO.484502.
Ultrathin silicon wafers are key components of wearable electronic devices and flexible electronics. Defects produced during the preparation process of ultrathin silicon wafers have a great influence on the electronic performance. A high-precision, nondestructive, and rapid damage detection method is urgently needed. IR digital holography has the advantage of being insensitive to visible light and environmental interference. In addition, micro-holography can achieve micro-target scaling with large range scaling. An ultrathin silicon wafer defect detection method of IR micro-digital holography is proposed in this paper for what we believe is the first time. Using the proposed defect detection method based on holography, the detection accuracy reached the submicron level.
超薄硅片是可穿戴电子设备和柔性电子器件的关键部件。超薄硅片制备过程中产生的缺陷对电子性能有很大影响。迫切需要一种高精度、无损且快速的损伤检测方法。红外数字全息术具有对可见光和环境干扰不敏感的优点。此外，微全息术可以实现大范围缩放的微目标缩放。本文首次提出了一种基于红外微数字全息术的超薄硅片缺陷检测方法。使用所提出的基于全息术的缺陷检测方法，检测精度达到了亚微米级别。
