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用于低成本柔性电子器件的具有高面密度的超薄晶体硅纳米和微膜

Ultrathin Crystalline Silicon Nano and Micro Membranes with High Areal Density for Low-Cost Flexible Electronics.

作者信息

Lee Ju Young, Shin Jongwoon, Kim Kyubeen, Ju Jeong Eun, Dutta Ankan, Kim Tae Soo, Cho Young Uk, Kim Taemin, Hu Luhing, Min Won Kyung, Jung Hyun-Suh, Park Young Sun, Won Sang Min, Yeo Woon-Hong, Moon Jooho, Khang Dahl-Young, Kim Hyun Jae, Ahn Jong-Hyun, Cheng Huanyu, Yu Ki Jun, Rogers John A

机构信息

School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemungu, Seoul, 03722, Republic of Korea.

Department of Engineering Science and Mechanics, The Pennsylvania State University, University Park, PA, 16802, USA.

出版信息

Small. 2023 Sep;19(39):e2302597. doi: 10.1002/smll.202302597. Epub 2023 May 28.

DOI:
10.1002/smll.202302597
PMID:37246255
Abstract

Ultrathin crystalline silicon is widely used as an active material for high-performance, flexible, and stretchable electronics, from simple passive and active components to complex integrated circuits, due to its excellent electrical and mechanical properties. However, in contrast to conventional silicon wafer-based devices, ultrathin crystalline silicon-based electronics require an expensive and rather complicated fabrication process. Although silicon-on-insulator (SOI) wafers are commonly used to obtain a single layer of crystalline silicon, they are costly and difficult to process. Therefore, as an alternative to SOI wafers-based thin layers, here, a simple transfer method is proposed for printing ultrathin multiple crystalline silicon sheets with thicknesses between 300 nm to 13 µm and high areal density (>90%) from a single mother wafer. Theoretically, the silicon nano/micro membrane can be generated until the mother wafer is completely consumed. In addition, the electronic applications of silicon membranes are successfully demonstrated through the fabrication of a flexible solar cell and flexible NMOS transistor arrays.

摘要

超薄晶体硅因其优异的电学和机械性能,作为高性能、柔性及可拉伸电子产品的活性材料被广泛应用,涵盖从简单的无源和有源元件到复杂的集成电路。然而,与传统的基于硅片的器件不同,基于超薄晶体硅的电子产品需要昂贵且相当复杂的制造工艺。尽管绝缘体上硅(SOI)晶圆通常用于获得单层晶体硅,但它们成本高昂且难以加工。因此,作为基于SOI晶圆的薄层的替代方案,本文提出了一种简单的转移方法,用于从单个母晶圆印刷厚度在300纳米至13微米之间且具有高面密度(>90%)的超薄多晶硅片。理论上,直到母晶圆被完全消耗,都可以生成硅纳米/微膜。此外,通过制造柔性太阳能电池和柔性NMOS晶体管阵列,成功展示了硅膜的电子应用。

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