Xing Bo, Zhang Yingfan, Zhao Jinzhui, Wang Jianyu, Huang Guoqin
Institute of Manufacturing Engineering, Huaqiao University, Xiamen 361021, China.
State Key Laboratory for High Performance Tools, Zhengzhou Abrasive Grinding Research Institute Co., Ltd., Zhengzhou 450001, China.
Materials (Basel). 2023 Sep 17;16(18):6252. doi: 10.3390/ma16186252.
Diamond/SiC (Dia/SiC) composites possess excellent properties, such as high thermal conductivity and low thermal expansion coefficient. In addition, they are suitable as electronic packaging materials. This study mainly optimized the diamond particle size packing and liquid-phase silicon infiltration processes and investigated a method to prevent the adhesion of the product to molten silicon. Based on the Dinger-Funk particle stacking theory, a multiscale diamond ratio optimization model was established, and the volume ratio of diamond particles with sizes of D20, D50, and D90 was optimized as 1:3:6. The method of pressureless silicon infiltration and the formulas of the composites were investigated. The influences of bedding powder on phase composition and microstructure were studied using X-ray diffraction and scanning electron microscopy, and the optimal parameters were obtained. The porosity of the preform was controlled by regulating the feeding amount through constant volume molding. Dia/SiC-8 exhibited the highest density of 2.73 g/cm and the lowest porosity of 0.6%. To avoid adhesion between the sample and buried powder with the bedding silicon powder, a mixed powder of α-SiN and silicon was used as the buried powder and the related mechanisms of action were discussed.
金刚石/碳化硅（Dia/SiC）复合材料具有优异的性能，如高导热率和低热膨胀系数。此外，它们适合作为电子封装材料。本研究主要优化了金刚石粒度堆积和液相硅渗透工艺，并研究了一种防止产品与熔融硅粘附的方法。基于丁格-芬克颗粒堆积理论，建立了多尺度金刚石比例优化模型，将粒径为D20、D50和D90的金刚石颗粒的体积比优化为1:3:6。研究了无压渗硅方法及复合材料配方。利用X射线衍射和扫描电子显微镜研究了铺底料对相组成和微观结构的影响，并获得了最佳参数。通过定容成型调节加料量来控制预制件的孔隙率。Dia/SiC-8表现出最高密度2.73 g/cm³和最低孔隙率0.6%。为避免样品与铺底硅粉的埋粉之间发生粘附，使用α-SiN和硅的混合粉末作为埋粉，并讨论了相关作用机理。
