Zhao Bojin, Huo Zongju, Li Lujie, Liu Hongjun, Hu Zhanggui, Wu Yicheng, Qiu Hailong
Tianjin Key Laboratory of Functional Crystal Materials, Institute of Functional Crystal, Tianjin University of Technology, Tianjin 300384, China.
Nanomaterials (Basel). 2023 Sep 8;13(18):2520. doi: 10.3390/nano13182520.
Two-dimensional (2D) transition metal dichalcogenides (TMDCs) draw much attention as critical semiconductor materials for 2D, optoelectronic, and spin electronic devices. Although controlled doping of 2D semiconductors can also be used to tune their bandgap and type of carrier and further change their electronic, optical, and catalytic properties, this remains an ongoing challenge. Here, we successfully doped a series of metal elements (including Hf, Zr, Gd, and Dy) into the monolayer MoS through a single-step chemical vapor transport (CVT), and the atomic embedded structure is confirmed by scanning transmission electron microscope (STEM) with a probe corrector measurement. In addition, the host crystal is well preserved, and no random atomic aggregation is observed. More importantly, adjusting the band structure of MoS enhanced the fluorescence and the carrier effect. This work provides a growth method for doping non-like elements into 2D MoS and potentially many other 2D materials to modify their properties.
二维（2D）过渡金属二硫属化物（TMDCs）作为二维、光电子和自旋电子器件的关键半导体材料备受关注。尽管二维半导体的可控掺杂也可用于调节其带隙和载流子类型，并进一步改变其电学、光学和催化性能，但这仍是一个持续的挑战。在此，我们通过一步化学气相传输（CVT）成功地将一系列金属元素（包括铪、锆、钆和镝）掺杂到单层二硫化钼中，并用带有探针校正器测量的扫描透射电子显微镜（STEM）确认了原子嵌入结构。此外，主体晶体保存完好，未观察到随机原子聚集。更重要的是，调整二硫化钼的能带结构增强了荧光和载流子效应。这项工作提供了一种将非同类元素掺杂到二维二硫化钼以及潜在的许多其他二维材料中以改变其性能的生长方法。
