Xu Dan, Jian Pengcheng, Liu Weijie, Tan Shizhou, Yang Yiming, Peng Meng, Dai Jiangnan, Chen Changqing, Wu Feng
Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China.
ACS Appl Mater Interfaces. 2024 Apr 24. doi: 10.1021/acsami.4c03154.
Modulating the electrical properties of two-dimensional (2D) materials is a fundamental prerequisite for their development to advanced electronic and optoelectronic devices. Substitutional doping has been demonstrated as an effective method for tuning the band structure in monolayer 2D materials. Here, we demonstrate a facile selective-area growth of vanadium-doped molybdenum disulfide (V-doped MoS) flakes via pre-patterned vanadium-metal-assisted chemical vapor deposition (CVD). Optical microscopy characterization revealed the presence of flake arrays. Transmission electron microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy were employed to identify the chemical composition and crystalline structure of as-grown flakes. Electrical measurements indicated a light p-type conduction behavior in monolayer V-doped MoS. Furthermore, the response time of phototransistors based on V-doped MoS monolayers exhibited a remarkable capability of 3 ms, representing approximately 3 orders of magnitude faster response than that observed in pure MoS phototransistors. This work hereby provides a feasible approach to doping of 2D materials, promising a scalable pathway for the integration of these materials into emerging electronic and optoelectronic devices.
调节二维（2D）材料的电学性质是其发展为先进电子和光电器件的基本前提。替代掺杂已被证明是调节单层二维材料能带结构的有效方法。在此，我们通过预图案化的钒金属辅助化学气相沉积（CVD）展示了一种简便的选择性区域生长钒掺杂二硫化钼（V掺杂MoS）薄片的方法。光学显微镜表征揭示了薄片阵列的存在。采用透射电子显微镜、拉曼光谱和X射线光电子能谱来确定生长后的薄片的化学成分和晶体结构。电学测量表明单层V掺杂MoS呈现出轻度p型导电行为。此外，基于V掺杂MoS单层的光电晶体管的响应时间表现出显著的3 ms能力，比在纯MoS光电晶体管中观察到的响应速度快约3个数量级。这项工作 hereby 提供了一种可行的二维材料掺杂方法，有望为将这些材料集成到新兴电子和光电器件中提供一条可扩展的途径。 （注：原文中“hereby”翻译为“特此”不太符合语境，此处保留英文未翻译，可能原文有误，正确应为“hereby”，翻译为“特此”，修改后的译文为：这项工作特此提供了一种可行的二维材料掺杂方法，有望为将这些材料集成到新兴电子和光电器件中提供一条可扩展的途径。）
