Realizing tunneling electroresistance effect in the Au/h-BN/In2Se3/Au vertical ferroelectric tunnel junction.

Two-dimensional (2D) ferroelectric tunnel junctions (FTJs) have great potential in the design of non-volatile memory devices due to the tunneling electroresistance (TER) effect and the fact that it is not constrained by critical thickness. Incorporation of 2D ferroelectric materials in realistic FTJs inevitably involves the contacts to the traditional three-dimensional (3D) metals. However, how to design the FTJs by combining the 2D ferroelectric materials with the 3D metals still needs to be studied. In this work, we design a vertical 3D FTJ by adopting the 3D metal Au as the left and right electrodes and the 2D ferroelectric material In2Se3 together with h-BN as the central scattering region. By density functional theory combined with the non-equilibrium Green's function (NEGF) method, we demonstrate that the h-BN intercalation with a large bandgap plays the role of good "insulator," which breaks the symmetry of the left and right electrodes. As a result, we obtain the TER ratio of about 170%, and it can be further improved to about 1200% if two layers of In2Se3 (2L-In2Se3) are adopted as the tunneling barrier layer. Our results provide another way for the design and application of ferroelectric memory devices based on 2D ferroelectric materials.